Display device

ABSTRACT

A display device includes a first base substrate including a light-emitting area and a non-light-emitting area around the light-emitting area, a wavelength conversion pattern on the first base substrate in the light-emitting area, and a light-emitting element layer on the wavelength conversion pattern. The light-emitting element layer includes a pixel electrode including a first conductive pattern between the wavelength conversion pattern and the first base substrate, and a second conductive pattern on the wavelength conversion pattern and spaced apart from the first conductive pattern, an organic light-emitting layer on the second conductive pattern, and a common electrode on the organic light-emitting layer.

CROSS REFERENCE TO RELATED APPLICATION(S)

This is a divisional application of U.S. patent application Ser. No.17/060,718, filed Oct. 1, 2020 (now pending), the disclosure of which isincorporated herein by reference in its entirety. U.S. patentapplication Ser. No. 17/060,718 claims priority to and benefits ofKorean Patent Application No. 10-2019-0124432 under 35 U.S.C. § 119,filed Oct. 8, 2019, in the Korean Intellectual Property Office (KIPO),the entire contents of which are incorporated herein by reference.

BACKGROUND 1. Technical Field

The disclosure relates to a display device and a method of manufacturinga display device.

2. Description of the Related Art

Display devices have increasingly become important with the developmentof multimedia. Accordingly, various display devices such as a liquidcrystal display device (LCD), an organic light-emitting diode (OLED)display device, and the like have been developed.

The OLED display device may include OLEDs, which are self-luminouselements. An OLED may include two electrodes facing each other and anorganic light-emitting layer interposed between the two electrodes.Electrons and holes from the two electrodes may recombine in thelight-emitting layer to generate excitons. In response to the transitionof the excitons from an excited state to a ground state, light may beemitted.

Since the OLED display device does not need a separate light source, theOLED display device has been spotlighted as a next-generation displaydevice because of numerous advantages such as low power consumption,thinness, lightweightness, wide viewing angles, high luminance andcontrast, and fast response speed.

It is to be understood that this background of the technology sectionis, in part, intended to provide useful background for understanding thetechnology. However, this background of the technology section may alsoinclude ideas, concepts, or recognitions that were not part of what wasknown or appreciated by those skilled in the pertinent art prior to acorresponding effective filing date of the subject matter disclosedherein.

SUMMARY

An embodiment provides a display device having the physical distance, ineach pixel, between a wavelength conversion pattern and an organiclight-emitting layer reduced.

An embodiment provides a method of manufacturing a display device havingthe physical distance, in each pixel, between a wavelength conversionpattern and an organic light-emitting layer reduced.

Additional features will be set forth in the description which follows,and in part will be apparent from the description, or may be learned bypractice of the disclosure.

According to an embodiment, a display device may include: a first basesubstrate including a light-emitting area and a non-light-emitting areaaround the light-emitting area; a wavelength conversion pattern disposedon the first base substrate, in the light-emitting area; and alight-emitting element layer disposed on the wavelength conversionpattern. The light-emitting element layer may include a pixel electrodeincluding a first conductive pattern disposed between the wavelengthconversion pattern and the first base substrate and a second conductivepattern disposed on the wavelength conversion pattern and spaced apartfrom the first conductive pattern, an organic light-emitting layerdisposed on the second conductive pattern, and a common electrodedisposed on the organic light-emitting layer.

The first conductive pattern may include a first conductive filmdisposed between the wavelength conversion pattern and the first basesubstrate, and a second conductive film disposed between the firstconductive film and the wavelength conversion pattern.

The first conductive film may include a conductive oxide, the secondconductive film may include a metal, and the second conductive patternmay include a conductive oxide.

The second conductive pattern may cover sides of the wavelengthconversion pattern and may contact with the second conductive film.

The display device may further include a pixel-defining film disposed onthe first base substrate, in the non-light-emitting area, wherein thepixel-defining film may contact sides of the second conductive pattern.

The display device may further include: an inorganic capping layerdisposed on sides of the wavelength conversion pattern, wherein thesecond conductive pattern may be disposed on the inorganic cappinglayer.

The second conductive pattern may be disposed on sides of the inorganiccapping layer. The inorganic capping layer may cover and contact thesides of the wavelength conversion pattern.

The display device may further include: a barrier wall disposed on sidesof the wavelength conversion pattern and the second conductive pattern;and a third conductive pattern disposed between a side of the barrierwall and a side of the wavelength conversion pattern.

The third conductive pattern may cover sides and a top surface of thebarrier wall.

The wavelength conversion pattern may include wavelength conversionparticles that convert the wavelength of light emitted from thelight-emitting element layer.

The wavelength conversion pattern may further include scatteringparticles that may scatter light emitted from the light-emitting elementlayer.

The organic light-emitting layer may include two or more organic layers.

The display device may further include: a thin-film encapsulation layerdisposed on the common electrode and spaced apart from the pixelelectrode; and a color filter disposed on the thin-film encapsulationlayer and spaced apart from the common electrode.

The display device may further include: a second base substrate disposedon the color filter; and a filler member disposed between the colorfilter and the thin-film encapsulation layer.

According to an embodiment, a display device may include: a basesubstrate including a light-emitting area and a non-light-emitting areaaround the light-emitting area; a wavelength conversion pattern disposedon the base substrate, in the light-emitting area; and a light-emittingelement layer disposed between the wavelength conversion pattern and thebase substrate. The light-emitting element layer may include a pixelelectrode disposed between the wavelength conversion pattern and thebase substrate, an organic light-emitting layer disposed between thewavelength conversion pattern and the pixel electrode, and a commonelectrode disposed between the organic light-emitting layer and thewavelength conversion pattern.

The display device may further include an inorganic capping layerdisposed between the common electrode and the wavelength conversionpattern.

The display device may further include: a first inorganic encapsulationfilm disposed between the inorganic capping layer and the wavelengthconversion pattern; a second inorganic encapsulation film disposed onthe wavelength conversion pattern; an organic encapsulation filmdisposed on the second inorganic encapsulation film; and a thirdinorganic encapsulation film disposed on the organic encapsulation film.

According to an embodiment of the disclosure, a method of manufacturinga display device may include forming a first conductive pattern on abase substrate; forming a wavelength conversion pattern on the firstconductive pattern; forming a second conductive pattern on thewavelength conversion pattern; forming an organic light-emitting layeron the second conductive pattern; and forming a common electrode on theorganic light-emitting layer.

The forming the first conductive pattern may include forming a firstconductive film on the base substrate and forming a second conductivefilm on the first conductive film.

The first conductive film may include a conductive oxide, the secondconductive film may include a metal, and the second conductive patternmay include a conductive oxide.

The forming the second conductive pattern may include forming the secondconductive pattern over sides of the wavelength conversion pattern andin contact with the second conductive film.

The method may further include, between the forming the wavelengthconversion pattern and the forming the second conductive pattern,forming an inorganic capping layer over sides of the wavelengthconversion pattern and in contact with the wavelength conversionpattern, wherein the forming the second conductive pattern may includeforming the second conductive pattern on the inorganic capping layer.

The forming the second conductive pattern may further include formingthe second conductive pattern on sides of the inorganic capping layer.

According to the aforementioned and other embodiments of the disclosure,the physical distance, in each pixel, between a wavelength conversionpattern and an organic light-emitting layer may be reduced.

Other features and embodiments may be apparent from the followingdetailed description, the drawings, and the claims.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other embodiments and features of the disclosure willbecome more apparent by describing in detail embodiments thereof withreference to the attached drawings, in which:

FIG. 1 is a perspective view of a display panel of a display deviceaccording to an embodiment;

FIG. 2 is a layout view of the display panel of FIG. 1 ;

FIG. 3 is a schematic cross-sectional view taken along line III-III′ ofFIG. 2 ;

FIGS. 4A through 4C are enlarged schematic cross-sectional views of apart A of FIG. 3 ;

FIG. 5 is an enlarged schematic cross-sectional view of a part B of FIG.3 ;

FIG. 6 is a flowchart illustrating a method of manufacturing a displaydevice according to an embodiment;

FIGS. 7 through 10 are schematic cross-sectional views illustrating themethod of FIG. 6 ;

FIG. 11 is a partial schematic cross-sectional view of a display panelof a display device according to an embodiment;

FIG. 12 is a partial schematic cross-sectional view of a display panelof a display device according to an embodiment;

FIG. 13 is a partial schematic cross-sectional view of a display panelof a display device according to an embodiment;

FIG. 14 is a partial schematic cross-sectional view of a display panelof a display device according to an embodiment;

FIG. 15 is a schematic cross-sectional view of a display panel of adisplay device according to an embodiment;

FIG. 16 is a partial schematic cross-sectional view of a display panelof a display device according to an embodiment;

FIG. 17 is a partial schematic cross-sectional view of a display panelof a display device according to an embodiment;

FIG. 18 is a partial schematic cross-sectional view of a display panelof a display device according to an embodiment;

FIG. 19 is a partial schematic cross-sectional view of a display panelof a display device according to an embodiment;

FIG. 20 is a layout view of a display panel of a display deviceaccording to an embodiment;

FIG. 21 is a schematic cross-sectional view of an organic layer of thedisplay panel of FIG. 20 ;

FIG. 22 is a plan view of a pixel of a display device according to anembodiment; and

FIG. 23 is a schematic cross-sectional view taken along lines Xa-Xa′,Xb-Xb′, and Xc-Xc′ of FIG. 22 .

DETAILED DESCRIPTION OF THE EMBODIMENTS

Although the disclosure may be modified in various manners and haveadditional embodiments, embodiments are illustrated in the accompanyingdrawings and will be mainly described in the specification. However, thescope of the disclosure is not limited to the embodiments in theaccompanying drawings and the specification and should be construed asincluding all of the changes, equivalents, and substitutions included inthe spirit and scope of the disclosure.

Some of the parts which are not associated with the description may notbe provided in order to describe embodiments of the disclosure and likereference numerals refer to like elements throughout the specification.

In the drawings, sizes and thicknesses of elements may be enlarged forbetter understanding, clarity, and ease of description thereof. However,the disclosure is not limited to the illustrated sizes and thicknesses.In the drawings, the thicknesses of layers, films, panels, regions, andother elements, may be exaggerated for clarity. In the drawings, forbetter understanding and ease of description, the thicknesses of somelayers and areas may be exaggerated.

Further, in the specification, the phrase “in a plan view” means when anobject portion is viewed from above, and the phrase “in a schematiccross-sectional view” means when a schematic cross-section taken byvertically cutting an object portion is viewed from the side. Inaddition, in this specification, the phrase “on a plane” means viewing atarget portion from the top. Additionally, the terms “overlap” or“overlapped” mean that a first object may be above or below or to a sideof a second object, and vice versa. Additionally, the term “overlap” mayinclude layer, stack, face or facing, extending over, covering or partlycovering or any other suitable term as would be appreciated andunderstood by those of ordinary skill in the art. The terms “face” and“facing” mean that a first element may directly or indirectly oppose asecond element. In a case in which a third element intervenes betweenthe first and second element, the first and second element may beunderstood as being indirectly opposed to one another, although stillfacing each other. When an element is described as ‘not overlapping’ or‘to not overlap’ another element, this may include that the elements arespaced apart from each other, offset from each other, or set aside fromeach other or any other suitable term as would be appreciated andunderstood by those of ordinary skill in the art.

Throughout the specification, when an element is referred to as being“connected” to another element, the element may be “directly connected”to another element, or “electrically connected” to another element withone or more intervening elements interposed therebetween. It will befurther understood that when the terms “comprises,” “comprising,”“includes” and/or “including” are used in this specification, they or itmay specify the presence of stated features, integers, steps,operations, elements and/or components, but do not preclude the presenceor addition of other features, integers, steps, operations, elements,components, and/or any combination thereof.

It will be understood that when an element is referred to as beingrelated to another element such as being “coupled” or “connected” toanother element, it can be directly coupled or connected to the otherelement or intervening elements may be present therebetween.

In contrast, it should be understood that when an element is referred toas being related to another element such as being “directly coupled” or“directly connected” to another element, there are no interveningelements present. Other expressions that explain the relationshipbetween elements, such as “between,” “directly between,” “adjacent to,”or “directly adjacent to,” should be construed in a similar way.

Throughout the specification, the same reference numerals will refer tothe same or like parts. It will be understood that, although the terms“first,” “second,” “third” etc. may be used herein to describe variouselements, components, regions, layers and/or sections, these elements,components, regions, layers and/or sections should not be limited bythese terms. These terms are only used to distinguish one element,component, region, layer or section from another element, component,region, layer or section. Thus, “a first element,” “component,”“region,” “layer” or “section” discussed below could be termed a secondelement, component, region, layer or section without departing from theteachings herein.

The terminology used herein is for the purpose of describing embodimentsonly and is not intended to be limiting. As used herein, “a”, “an,”“the,” and “at least one” do not denote a limitation of quantity, andare intended to include both the singular and plural, unless the contextclearly indicates otherwise. For example, “an element” has the samemeaning as “at least one element,” unless the context clearly indicatesotherwise. “At least one” is not to be construed as limiting “a” or“an.” “Or” means “and/or.” As used herein, the term “and/or” includesany and all combinations of one or more of the associated listed items.

It will be further understood that the terms “comprises” and/or“comprising,” or “includes” and/or “including” when used in thisspecification, may specify the presence of stated features, regions,integers, steps, operations, elements, and/or components, but do notpreclude the presence or addition of one or more other features,regions, integers, steps, operations, elements, components, and/orgroups thereof.

Furthermore, relative terms, such as “lower” or “bottom” and “upper” or“top,” may be used herein to describe one element's relationship toanother element as illustrated in the Figures. It will be understoodthat relative terms are intended to encompass different orientations ofthe device in addition to the orientation depicted in the Figures. Forexample, if the device in one of the figures is turned over, elementsdescribed as being on the “lower” side of other elements would then beoriented on “upper” sides of the other elements. The term “lower,” cantherefore, encompass both an orientation of “lower” and “upper,”depending on the particular orientation of the figure. Similarly, if thedevice in one of the figures is turned over, elements described as“below” or “beneath” other elements would then be oriented “above” theother elements. The terms “below” or “beneath” can, therefore, encompassboth an orientation of above and below.

“About” or “approximately” as used herein is inclusive of the statedvalue and means within an acceptable range of deviation for theparticular value as determined by one of ordinary skill in the art,considering the measurement in question and the error associated withmeasurement of the particular quantity (i.e., the limitations of themeasurement system). For example, “about” can mean within one or morestandard deviations, or within ±30%, 20%, 10% or 5% of the stated value.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this disclosure pertains. It willbe further understood that terms, such as those defined in commonly useddictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art and thedisclosure, and will not be interpreted in an idealized or overly formalsense unless expressly so defined herein.

Embodiments are described herein with reference to schematic crosssection illustrations that are schematic illustrations of sampleembodiments. As such, variations from the shapes of the illustrations asa result, for example, of manufacturing techniques and/or tolerances,are to be expected. Thus, embodiments described herein should not beconstrued as limited to the particular shapes of regions as illustratedherein but are to include deviations in shapes that result, for example,from manufacturing. For example, a region illustrated or described asflat may, typically, have rough and/or nonlinear features. Moreover,sharp angles that are illustrated may be rounded. Thus, the regionsillustrated in the figures are schematic in nature and their shapes arenot intended to illustrate the precise shape of a region and are notintended to limit the scope of the claims.

Hereinafter, embodiments will be described with reference to theattached drawings.

FIG. 1 is a perspective view of a display panel of a display deviceaccording to an embodiment,

FIG. 2 is a layout view of the display panel of FIG. 1 , FIG. 3 is aschematic cross-sectional view taken along line III-III′ of FIG. 2 ,FIGS. 4A through 4C are enlarged schematic cross-sectional views of apart A of FIG. 3 , and FIG. 5 is an enlarged schematic cross-sectionalview of a part B of FIG. 3 .

Referring to FIGS. 1 through 5 , a display device may be applicable tovarious electronic devices such as a tablet personal computer (PC), asmartphone, a navigation unit, a camera, a central information display(CID) provided in an automobile, a wristwatch-type electronic device, apersonal digital assistant (PDA), a portable multimedia player (PMP), asmall- or medium-sized electronic device such as a gaming device, atelevision (TV), an outdoors billboard, a monitor, a PC, or a notebookcomputer, but the disclosure is not limited thereto. For example, thedisplay device may also be applicable to various electronic devicesother than those set forth herein.

The display device may have a rectangular shape in a plan view. Thedisplay device may include a pair of short sides extending in onedirection and a pair of long sides extending in another direction thatmay intersect the direction in which the short sides extend. Forexample, the long sides of the display device may extend in a firstdirection DR1, and the short sides of the display device may extend in asecond direction DR2 that may intersect the first direction DR1 in aplan view. The corners at which the long sides and the short sides ofthe display device may meet may be right-angled in a plan view, but thedisclosure is not limited thereto. Alternatively, the corners at whichthe long sides and the short sides of the display device may meet may berounded. The planar shape of the display device is not particularlylimited, and the display device may have various shapes other than arectangular shape, such as a circular, square, or elliptical shape, orother shapes within the spirit and the scope of the disclosure.

The display device may include a display panel 100. The planar shape ofthe display panel 100 may be the same as, or similar to, the planarshape of the display device. For example, the display panel 100 may havea rectangular shape in a plan view and may include a pair of long sidesextending in the first direction DR1 and a pair of short sides extendingin the second direction DR2. The corners at which the long sides and theshort sides of the display panel 100 may meet may be, but not limitedto, right-angled or rounded.

The display panel 100 may include a display area DA in which an image orimages may be displayed and a non-display area NA in which no image orimages may be displayed.

The display area DA may be located or disposed in a central part of thedisplay panel 100. The display area DA may include pixels (PX1, PX2, andPX3). The pixels (PX1, PX2, and PX3) may include a first pixel PX1 whichmay emit light of a first color (e.g., red light having a peakwavelength in a range of about 610 nm to about 650 nm), a second pixelPX2 which may emit light of a second color (e.g., green light having apeak wavelength in a range of about 510 nm to about 550 nm), and a thirdpixel PX3 which may emit light of a third color (e.g., blue light havinga peak wavelength in a range of about 430 nm to about 470 nm). Thefirst, second, and third pixels PX1, PX2, and PX3 may be alternatelyarranged in rows and columns. The pixels (PX1, PX2, and PX3) may bearranged in various arrangements such as a stripe arrangement or aPenTile arrangement.

FIG. 2 illustrates that the first, second, and third pixels PX1, PX2,and PX3 may have the same size, but the disclosure is not limitedthereto. Alternatively, the first, second, and third pixels PX1, PX2,and PX3 may have different sizes.

The pixels (PX1, PX2, and PX3) may include light-outputting areas (PA1,PA2, and PA3) and non-light-outputting areas PB. The light-outputtingareas (PA1, PA2, and PA3) may be defined as areas from which light maybe emitted through a display surface, and the non-light-outputting areasPB may be defined as areas from which no light may be emitted throughthe display surface. The non-light-outputting areas PB may be located orlocated or disposed to surround the light-outputting areas (PA1, PA2,and PA3). The light-outputting areas (PA1, PA2, and PA3) and thenon-light-outputting areas PB may be defined by a light-shielding memberBM that will be described later.

The pixels (PX1, PX2, and PX3) may include light-emitting areas. Thelight-emitting areas may be defined as areas in which light may beemitted by an organic layer. Non-light-emitting areas may be located orlocated or disposed around the light-emitting areas. The light-emittingareas and the non-light-emitting areas may be defined by a bank layer ora pixel-defining film 160.

The light-emitting areas may overlap the light-outputting areas (PA1,PA2, and PA3) in a thickness direction. The light-emitting areas maycorrespond to the light-outputting areas (PA1, PA2, and PA3) in thethickness direction. The light-emitting areas may have a smaller sizethan the light-outputting areas (PA1, PA2, and PA3) in a plan view, butthe disclosure is not limited thereto. Alternatively, the light-emittingareas may have substantially the same size as the light-outputting areas(PA1, PA2, and PA3).

The wavelengths of light emitted from the pixels (PX1, PX2, and PX3) maybe controlled not only by light emitted from the light-emitting areas,but also by wavelength conversion layers or color filters that may belocated or disposed to overlap the first, second, and thirdlight-emitting areas. For example, first, second, and thirdlight-emitting areas of the first, second, and third pixels PX1, PX2,and PX3 may emit light of the same wavelength (e.g., blue light), andthe light emitted by the first, second, and third light-emitting areasmay be converted into different colors by the wavelength conversionlayers and/or the color filters of the first, second, and third pixelsPX1, PX2, and PX3.

The non-display area NA may be located or disposed on the outside of thedisplay area DA and may surround the display area DA. The non-displayarea NA may include dummy light-emitting areas that may havesubstantially the same structure as light-emitting areas, but may becontrolled not to emit light. Alternatively, the non-display area NA mayinclude light-emitting areas, but the emission of light from thelight-emitting areas in a display direction may be blocked by thelight-shielding member BM.

Referring to FIG. 3 , the display panel 100 may include a first basesubstrate 110, switching or driving elements (T1, T2, and T3), aninsulating film 120, the pixel-defining film 160, organic light-emittingelements (ED1, ED2, and ED3), wavelength conversion/light transmissionpatterns (130, 140, and 150), and a thin-film encapsulation layer 170.

The display panel 100 may be a thin-film transistor (TFT) substrate oran organic light-emitting substrate including the switching elements(T1, T2, and T3) and the organic light-emitting elements (ED1, ED2, andED3).

The first base 110 may be formed of a light-transmitting material. Thefirst base substrate 110 may be a glass substrate or a plasticsubstrate.

On the first base substrate 110, one or more switching elements (T1, T2,and T3) may be located or disposed in each of the pixels (PX1, PX2, andPX3). Although not illustrated, multiple signal wires (e.g., gate wires,data wires, power wires, and the like) may be located or disposed on thefirst base substrate 110 to transmit signals to the switching elements(T1, T2, and T3).

The insulating film 120 may be located or disposed on the switchingelements (T1, T2, and T3). The insulating film 120 may be formed as anorganic film. For example, the insulating film 120 may include anacrylic resin, an epoxy resin, an imide resin, or an ester resin.

The wavelength conversion patterns (130, 140, and 150) may be located ordisposed in the light-outputting areas (PA1, PA2, and PA3) of the pixels(PX1, PX2, and PX3). For example, a first wavelength conversion pattern130 may be located or disposed in the first light-outputting area PA1 ofthe first pixel PX1, a second wavelength conversion pattern 140 may belocated or disposed in the second light-outputting area PA2 of thesecond pixel PX2, and a light transmission pattern 150 may be located ordisposed in the third light-outputting area PA3 of the third pixel PX3.The first wavelength conversion pattern 130 may not be located ordisposed in the second and third light-outputting areas PA2 and PA3, thesecond wavelength conversion pattern 140 may not be located or disposedin the first and third light-outputting areas PA1 and PA3, and the lighttransmission pattern 150 may not be located or disposed in the first andsecond light-outputting areas PA1 and PA2. However, the disclosure isnot limited thereto.

The first wavelength conversion pattern 130 may convert or shift thepeak wavelength of incident light into the peak wavelength of anotherlight. The first wavelength conversion pattern 130 may convert bluelight L1 into red light L2 and may emit the red light L2.

The first wavelength conversion pattern 130 may include a first baseresin 131 and a first wavelength shifter 135, which may be dispersed inthe first base resin 131, and may include a first scatterer 133, whichmay be dispersed in the first base resin 131.

The material of the first base resin 131 is not particularly limited aslong as it has high light transmittance and has an excellent dispersioncharacteristic for the first wavelength shifter 135 and the firstscatterer 133. For example, the first base resin 131 may include anorganic material such as an epoxy resin, an acrylic resin, a cardoresin, or an imide resin.

The first wavelength shifter 135 may convert or shift the peakwavelength of the incident light into a predetermined peak wavelength.Examples of the first wavelength shifter 135 may include quantum dots,quantum rods, and a phosphor. For example, the quantum dots may be aparticulate material that emits light of a particular color in responseto the transition of electrons from a conduction band to a valance band.

The quantum dots may be a semiconductor nanocrystal material. Since thequantum dots have a predetermined band gap depending on theircomposition and size, the quantum dots may absorb light and emit lightof a predetermined wavelength. The semiconductor nanocrystal materialmay include a group IV element, a group II-VI compound, a group III-Vcompound, a group IV-VI compound, or a combination thereof.

Examples of the group IV element may include silicon (Si), germanium(Ge), and a binary compound such as silicon carbide (SiC) orsilicon-germanium (SiGe), but the disclosure is not limited thereto.

Examples of the group II-VI compound may include: a binary compoundselected from among CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe,MgSe, MgS, and a mixture thereof; a ternary compound selected from amongCdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS,CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe,MgZnS, and a mixture thereof; and a quaternary compound selected fromamong HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe,HgZnSeS, HgZnSeTe, HgZnSTe, and a mixture thereof, but the disclosure isnot limited thereto.

Examples of the group III-V compound may include: a binary compoundselected from among GaN, GaP, GaAs, GaSb, AN, AlP, AlAs, AlSb, InN, InP,InAs, InSb, and a mixture thereof; a ternary compound selected fromamong GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AINAs, AlNSb, AlPAs,AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, and a mixture thereof;and a quaternary compound selected from among GaAlNAs, GaAlNSb, GaAlPAs,GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs,InAlNSb, InAlPAs, InAlPSb, and a mixture thereof.

Examples of the group IV-VI compound may include: a binary compoundselected from among SnS, SnSe, SnTe, PbS, PbSe, PbTe, and a mixturethereof; a ternary compound selected from among SnSeS, SnSeTe, SnSTe,PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, and a mixture thereof; anda quaternary compound selected from among SnPbSSe, SnPbSeTe, SnPbSTe,and a mixture thereof, but the disclosure is not limited thereto.

The quantum dots may have a core-shell structure consisting of a coreincluding the above-described semiconductor nanocrystal material and ashell surrounding the core. The shells of the quantum dots may serve asprotective layers for maintaining the semiconductor characteristics ofthe quantum dots by preventing chemical denaturation of the cores of thequantum dots and/or as charging layers for imparting electrophoreticcharacteristics to the quantum dots. The shells of the quantum dots mayhave a single-layer structure or a multilayer structure. The shells ofthe quantum dots may include a metal or non-metal oxide, a semiconductorcompound, or a combination thereof.

For example, the metal or non-metal oxide may be a binary compound suchas SiO₂, Al₂O₃, TiO₂, ZnO, MnO, Mn₂O₃, Mn₃O₄, CuO, FeO, Fe₂O₃, Fe₃O₄,CoO, Co₃O₄, or NiO or a ternary compound such as MgAl₂O₄, CoFe₂O₄,NiFe₂O₄, or CoMn₂O₄, but the disclosure is not limited thereto.

For example, the semiconductor compound may be CdS, CdSe, CdTe, ZnS,ZnSe, ZnTe, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InSb, AlAs,AlP, or AlSb, but the disclosure is not limited thereto.

Light emitted by the first wavelength shifter 135 may have a full widthat half maximum of about 45 nm or less, about 40 nm or less, or about 30nm or less, and thus, the purity of colors displayed by the displaydevice and the color reproducibility of the display device may beimproved. The first wavelength shifter 135 may emit light in variousdirections regardless of the incidence direction of the light. The sidevisibility of the red color L2 displayed in the first light-outputtingarea PA1 may be improved.

Some of the blue L1 provided from the first light-emitting area of thefirst pixel PX1 may be emitted through the first wavelength conversionpattern 130 without being converted into red light L2 by the firstwavelength shifter 135. Blue light L1 incident upon a first color filter181 without being converted by the first wavelength conversion pattern130 may be blocked by the first color filter 181. On the contrary, thered light L2 produced by the first wavelength conversion pattern 130 maybe emitted to the outside of the display device through the first colorfilter 181.

The first scatterer 133 may have a different refractive index from thefirst base resin 131 and may form an optical interface with the firstbase resin 131. For example, the first scatterer 133 may includelight-scattering particles. The material of the first scatterer 133 isnot particularly limited as long as it can scatter at least some lightpassing therethrough. For example, the first scatterer 133 may includemetal oxide particles or organic particles. The metal oxide particlesmay be, for example, particles of titanium oxide (TiO₂), zirconium oxide(ZrO₂), aluminum oxide (Al₂O₃), indium oxide (In₂O₃), zinc oxide (ZnO),or tin oxide (SnO₂), and the organic particles may be, for example,particles of an acrylic resin or a urethane resin.

The first scatterer 133 may scatter light in random directionsregardless of the incidence direction of the light without changing thewavelength of the light that passes through the first wavelengthconversion pattern 130. As a result, the length of the path of the lightthat passes through the first wavelength conversion pattern 130 may beincreased, and the color conversion efficiency of the first wavelengthshifter 135 may be improved.

The thickness of the first wavelength conversion pattern 130 may be in arange of about 3 μm to about 15 μm. In a case where the first wavelengthconversion pattern 130 may be formed to have a thickness of about 3 μmor greater, the color conversion efficiency of the first wavelengthconversion pattern 130 may be improved. The thickness of the firstwavelength conversion pattern 130 may be up to about 15 μm.

The content of the first wavelength shifter 135 in the first wavelengthconversion pattern 130 may be in a range of about 10% to about 60%. Forexample, the content of the first scatterer 133 in the first wavelengthconversion pattern 130 may be in a range of about 2% to about 10%.

The second wavelength conversion pattern 140 may convert or shift thepeak wavelength of incident light into the peak wavelength of anotherlight. The second wavelength conversion pattern 140 may convert bluelight L1 into green light L3 having a peak wavelength in a range ofabout 510 nm to about 550 nm and may emit the green light L3.

The second wavelength conversion pattern 140 may include a second baseresin 141 and a second wavelength shifter 145 which may be dispersed inthe second base resin 141 and may include a second scatterer 143 whichmay be dispersed in the second base resin 141.

The material of the second base resin 141 may be formed of the same orsimilar material as the first base resin 131 and may include at leastone of the above-described materials of the first base resin 131.

The second wavelength shifter 145 may convert or shift the peakwavelength of the incident light into a predetermined peak wavelength.The second wavelength shifter 145 may convert blue light L1 having apeak wavelength in a range of about 430 nm to about 470 nm into greenlight L3 having a peak wavelength in a range of about 510 nm to about550 nm. Some of the blue light L1 may be emitted through the secondwavelength conversion pattern 140 without being converted into greenlight L3 by the second wavelength shifter 145 and may be blocked by asecond color filter 183. The green light L3 produced by the secondwavelength conversion pattern 140 may be emitted through the secondcolor filter 183.

Examples of the second wavelength shifter 145 may include quantum dots,quantum rods, and a phosphor. The second wavelength shifter 145 may besubstantially the same as, or similar to, the first wavelength shifter135, and thus, a further detailed description thereof will be omitted.

The first and second wavelength shifters 133 and 143 may both be formedof quantum dots. As an example, the diameter of the quantum dots of thefirst wavelength shifter 135 may be greater than the diameter of thequantum dots of the second wavelength shifter 145.

The second scatterer 143 may have a different refractive index from thesecond base resin 141 and may form an optical interface with the secondbase resin 141. For example, the second scatterer 143 may includelight-scattering particles. The second scatterer 143 may besubstantially the same as, or similar to, the first scatterer 133, andthus, a further detailed description thereof will be omitted.

The thickness of the second wavelength conversion pattern 140 may besubstantially the same as the thickness of the first wavelengthconversion pattern 130.

The content of the second wavelength shifter 145 in the secondwavelength conversion pattern 140 may be in a range of about 10% toabout 60%. The content of the second scatterer 143 in the secondwavelength conversion pattern 140 may be in a range of about 2% to about10%.

The light transmission pattern 150 may transmit incident lighttherethrough. For example, the light transmission pattern 150 maytransmit blue light L1 provided from the third light-emitting area ofthe third pixel PX3 therethrough as it is. The light transmissionpattern 150 may include a third scatterer 153 and may thus scatter bluelight L1 in any arbitrary directions.

The light transmission pattern 150 may include a third base resin 151and the third scatterer 153, which may be dispersed in the third baseresin 151.

The material of the third base resin 151 may be formed of the same orsimilar material as the first base resin 131 and may include at leastone of the above-described materials of the first base resin 131.

The third scatterer 153 may have a different refractive index from thethird base resin 151 and may form an optical interface with the thirdbase resin 151. For example, the third scatterer 153 may includelight-scattering particles. The third scatterer 153 may be substantiallythe same as, or similar to, the first scatterer 133, and thus, a furtherdetailed description thereof will be omitted.

Blue light L1 provided by the third light-emitting element ED3 may beemitted from the third pixel PX3 through the light transmission pattern150.

The display panel 100 may be a top emission-type display panel.

Pixel electrodes (AE1, AE2, and AE3) may be located or disposed on thefirst wavelength conversion pattern 130, the second wavelengthconversion pattern 140, and the light transmission pattern 150,respectively. The pixel electrodes (AE1, AE2, and AE3) may be located ordisposed in the first, second, and third light-emitting areas,respectively, and may extend into the non-light-emitting areas aroundthe first, second, and third light-emitting areas. The pixel electrodes(AE1, AE2, and AE3) may be connected to the switching elements (T1, T2,and T3) via holes that may penetrate the insulating film 120.

The pixel electrodes (AE1, AE2, and AE3) may be the anode electrodes oforganic light-emitting elements.

The pixel electrodes (AE1, AE2, and AE3) may have a multilayerstructure. Each of the pixel electrodes (AE1, AE2, and AE3) may includea first conductive pattern which may be located or disposed on theinsulating film 120, a second conductive pattern which may be located ordisposed on the first conductive pattern, and a third conductive patternwhich may be located or disposed on the first wavelength conversionpattern 130, the second wavelength conversion pattern 140, or the lighttransmission pattern 150.

The first conductive patterns and the second conductive patterns of thepixel electrodes (AE1, AE2, and AE3) may be located or disposed betweenthe insulating film 120 and the first wavelength conversion pattern 130,the second wavelength conversion pattern 140, or the light transmissionpattern 150, and the third conductive patterns of the pixel electrodes(AE1, AE2, and AE3) may be located or disposed between an organic layerOL and the wavelength conversion/light transmission patterns (130, 140,and 150).

The first conductive patterns of the pixel electrodes (AE1, AE2, andAE3) may be connected to one of the switching elements (T1, T2, and T3)via a via hole that may penetrate the insulating film 120, and thesecond conductive pattern of the pixel electrodes (AE1, AE2, and AE3)may be located or disposed between the first conductive pattern and thefirst wavelength conversion pattern 130, the second wavelengthconversion pattern 140, or the light transmission pattern 150.

The third conductive patterns of the pixel electrodes (AE1, AE2, andAE3) may be formed of a high work function material that may facilitatethe injection of holes, and the first conductive pattern may include amaterial that can easily be deposited on the insulating film 120.

The first and third conductive patterns may include a conductive oxide,and the second conductive pattern may include a reflective metal. Forexample, the first and third conductive patterns may include at leastone of indium-tin-oxide (ITO), indium-zinc-oxide (IZO), ZnO, or indiumoxide (In₂O₃), and the second conductive pattern may include at leastone of silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt),palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir),chromium (Cr), lithium (Li), calcium (Ca), and a mixture thereof.

The pixel-defining film 160 may be located or disposed on the pixelelectrodes (AE1, AE2, and AE3). The pixel-defining film 160 may belocated or disposed along the boundaries of each of the pixels (PX1,PX2, and PX3). The pixel-defining film 160 may be formed in a latticeshape and may include openings that at least may partially expose thepixel electrodes (AE1, AE2, and AE3). As described above, the first,second, and third light-emitting areas and the non-light-emitting areasmay be defined by the pixel-defining film 160. For example, parts of thepixel electrodes (AE1, AE2, and AE3) that may not covered, but exposed,by the pixel-defining film 160 may be the first, second, and thirdlight-emitting areas, and parts of the first, second, and third pixelelectrodes AE1, AE2, and AE3 that may be covered by the pixel-definingfilm 160 may be the non-light-emitting areas.

The pixel-defining film 160 may be in direct contact with the thirdconductive patterns of the pixel electrodes (AE1, AE2, and AE3).

In an embodiment, the pixel-defining film 160 may include an organicinsulating material such as an acrylic resin, an epoxy resin, a phenolicresin, a polyamide resin, a polyimide resin, an unsaturated polyesterresin, a polyphenylene ether resin, a polyphenylene sulfide resin, orbenzocyclobutene (BCB). The organic layer OL may be located or disposedon the pixel electrodes (AE1, AE2, and AE3), which may be exposed by theopenings of the pixel-defining film 160. The organic layer OL mayprovide light emitted by a light-emitting layer, for example, blue lightL1, in upward and downward directions. The organic layer OL willhereinafter be described with reference to FIGS. 4A through 4C.

Referring to FIG. 4A, the organic layer OL may include a first holetransport layer HTL1, which may be located or disposed on the firstpixel electrode AE1, a first emission layer EL1, which may be located ordisposed on the first hole transport layer HTL1, and a first electrontransport layer ETL1, which may be located or disposed on the firstemission layer ELL The organic layer OL may include only one emissionlayer, e.g., the first emission layer EL1, and the first emission layerEL1 may emit blue light L1. However, the structure of the organic layerOL is not particularly limited to that illustrated in FIG. 4A, but mayvary, as illustrated in FIGS. 4B and 4C.

Referring to FIG. 4B, an organic layer OLa may include a first chargegeneration layer CGL1, which may be located or disposed on a firstemission layer EL1, and a second emission layer EL2, which may belocated or disposed on the first charge generation layer CGL1, and afirst charge transport layer ETL1 may be located or disposed on thesecond emission layer EL2.

The first charge generation layer CGL1 may inject charges into each ofthe first and second emission layers EL1 and EL2. The first chargegeneration layer CGL1 may balance the charges between the first andsecond emission layers EL1 and EL2. The first charge generation layerCGL1 may include n- and p-type charge generation layers. The p-typecharge generation layer may be located or disposed on the n-type chargegeneration layer.

The second emission layer EL2 may emit light of the same peak wavelengthas, or a different peak wavelength from, the first emission layer EL1,but the disclosure is not limited thereto. Alternatively, the first andsecond emission layers EL1 and EL2 may emit light of different colors.For example, the first emission layer EL1 may emit blue light, and thesecond emission layer EL2 may emit green light.

Since the organic layer OLa may include two emission layers, i.e., thefirst and second emission layers EL1 and EL2, the emission efficiencyand the lifetime of the organic layer OLa may be improved as compared tothe organic layer OL of FIG. 4A.

FIG. 4C illustrates an organic layer OLb having two charge generationlayers interposed between two charge generation layers. Referring toFIG. 4C, the organic layer OLb may include a first charge generationlayer CGL1, which may be located or disposed on a first emission layerEL1, a second emission layer EL2, which may be located or disposed onthe first charge generation layer CGL1, a second charge generation layerCGL2, which may be located or disposed on the second emission layer EL2,and a third emission layer EL3, which may be located or disposed on thesecond charge generation layer CGL2. A first charge transport layer ETL1may be located or disposed on the third emission layer EL3.

The third emission layer EL3, like the first and second emission layersEL1 and EL2, may emit blue light, but the disclosure is not limitedthereto. In an embodiment, the first, second, and third light-emittinglayers EL1, EL2, and EL3 may emit blue light having the same peakwavelength or different peak wavelengths. In other embodiments, thefirst, second, and third light-emitting layers EL1, EL2, and EL3 mayemit light of different colors. For example, the first, second, andthird light-emitting layers EL1, EL2, and EL3 may emit blue light orgreen light.

Referring again to FIG. 3 , parts of the organic layer OL on the first,second, and third pixel electrodes AE1, AE2, and AE3 may be connected toone another. Even if the parts of the organic layer OL on the first,second, and third pixel electrodes AE1, AE2, and AE3 are all connected,only parts of the organic layer OL that are in contact with the pixelelectrodes (AE1, AE2, and AE3) may emit light. If the organic layer OLis formed in common for all the pixels (PX1, PX2, and PX3), the organiclayer OL may be formed all at once, which may be desirable in terms ofprocess efficiency.

In an embodiment, unlike in the embodiment of FIG. 3 , separate organiclayers OL may be formed for different pixels. For example, organiclayers OL may be formed on the pixel electrodes (AE1, AE2, and AE3) tobe separate from one another. The organic layers OL on the first,second, and third pixel electrodes AE1, AE2, and AE3 may be separated bythe pixel-defining film 160. If organic layers OL are formed in thepixels (PX1, PX2, and PX3) to be separate from one another, pixels thatare not intended may be prevented from emitting light due to a leakagecurrent.

In an embodiment, some of the films of the organic layer OL may bedivided into segments for the respective pixels, and some of the filmsof the organic layer OL may be formed as common layers for all thepixels (PX1, PX2, and PX3). For example, each of the emission layers ofthe organic layer OL may be divided into segments for the respectivepixels, and each of the hole transport layers and/or the electrontransport layer(s) of the organic layer OL may be formed as a commonlayer.

Referring again to FIG. 4 , in a case where the pixel electrodes (AE1,AE2, and AE3) are the anode electrodes of OLEDs, a common electrode CEmay be the cathode electrodes of the OLEDs and may include a low workfunction material that may facilitate the injection of electrons, suchas, for example, Li, Ca, LiF/Ca, LiF/Al, Al, Mg, Ag, Pt, Pd, Ni, Au Nd,Ir, Cr, BaF, Ba, or a compound or mixture thereof (e.g., the mixture ofAg and Mg).

In a case where the display panel 100 is a top emission-type displaypanel, the common electrode CE may have transparency or translucency. Ifthe common electrode CE is formed to be as thin as dozens to hundreds ofangstroms, the common electrode CE may have transparency ortranslucency. In a case where a metallic film having a low work functionmay be used to form the common electrode CE, the common electrode CE mayinclude a layer of a transparent conductive material such as tungstenoxide (WxOx), titanium oxide (TiO₂), ITO, IZO, ZnO,indium-tin-zinc-oxide (ITZO), magnesium oxide (MgO) to securetransparency and reduce resistance.

The first pixel electrode AE1, the organic layer OL, and the commonelectrode CE may form the first organic light-emitting element ED1, thesecond pixel electrode AE2, the organic layer OL, and the commonelectrode CE may form the second organic light-emitting element ED2, andthe third pixel electrode AE3, the organic layer OL, and the commonelectrode CE may form the third organic light-emitting element ED3.

The thin-film encapsulation layer 170 may be located or disposed on thecommon electrode CE. The thin-film encapsulation layer 170 may belocated or disposed on the organic light-emitting elements (ED1, ED2,and ED3) to seal the organic light-emitting elements (ED1, ED2, and ED3)and thus to prevent the penetration of impurities or moisture.

The thin-film encapsulation layer 170 may be located or disposed on theentire surface of the display panel 100 regardless of the pixels (PX1,PX2, and PX3). As illustrated in FIG. 3 , the thin-film encapsulationlayer 170 may extend even into part of the non-display area NA.

First and second encapsulation inorganic films 171 and 173 of thethin-film encapsulation layer 170 may be formed of silicon nitride,aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride,tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tinoxide, cerium oxide, silicon oxynitride (SiON), or lithium fluoride.

An encapsulation organic film 172 of the thin-film encapsulation layer170 may be formed of an acrylic resin, a methacrylic resin,polyisoprene, a vinyl resin, an epoxy resin, a urethane resin, acellulose resin, or a perylene resin.

A first inorganic capping layer CPL1 may be located or disposed betweenthe thin-film encapsulation layer 170 and the common electrode CE. Thefirst inorganic capping layer CPL1 may include an inorganic material.The first inorganic capping layer CPL1 may be located or disposed on thecommon electrode CE and may protect the organic light-emitting elements(ED1, ED2, and ED3), which may be located or disposed in the pixels(PX1, PX2, and PX3).

The light-shielding member BM may be located or disposed on thethin-film encapsulation layer 170.

The light-shielding member BM may be located or disposed along theboundaries between the light-outputting areas (PA1, PA2, and PA3) toblock the transmission of light in the non-light-outputting areas PB.The light-shielding member BM may prevent colors from being mixedbetween the pixels (PX1, PX2, and PX3).

The light-shielding member BM may be arranged in a lattice shape in aplan view. The light-shielding member BM may at least partially overlapthe pixel-defining film 160 in the thickness direction.

The light-shielding member BM may include at least one of an organicmaterial, a metallic material containing Cr, and carbon black.

Color filters (181, 183, and 185) may be located or disposed on thelight-shielding member BM and the thin-film encapsulation layer 170. Thecolor filters (181, 183, and 185) may be absorptive filters that absorblight of a particular wavelength while transmitting light of anotherparticular wavelength therethrough.

A first color filter 181 may be located or disposed in the firstlight-outputting area PA1, a second color filter 183 may be located ordisposed in the second light-outputting area PA2, and a third colorfilter 185 may be located or disposed in the third light-outputting areaPA3. However, the disclosure is not limited thereto. The color filters(181, 183, and 185) may extend even on the light-shielding member BM.

The first color filter 181 may block or absorb blue light L1 emittedfrom the first wavelength conversion pattern 130. For example, the firstcolor filter 181 may serve as a blue-light cut filter that blocks bluelight and also as a red-light transmission filter that selectivelytransmits red light therethrough. The first color filter 181 may includea red colorant.

The second color filter 183 may block or absorb blue light L1 emittedfrom the second wavelength conversion pattern 140. For example, thesecond color filter 183 may serve as a blue-light cut filter that blocksblue light and also as a green-light transmission filter thatselectively transmits green light therethrough. The second color filter183 may include a green colorant.

The third color filter 185 may serve as a blue-light transmission filterthat transmits blue light L1 emitted from the light transmission pattern150. The third color filter 185 may include a blue colorant.

The color filters (181, 183, and 185) may absorb at least some incidentlight. For example, since the first color filter 181 functions as ared-light transmission filter, the first color filter 181 may block atleast some of external light except for red light. For example, sincethe second color filter 183 functions as a green-light transmissionfilter, the first color filter 181 may block at least some of externallight except for green light. For example, since the third color filter185 functions as a blue-light transmission filter, the third colorfilter 185 may block at least some of external light except for bluelight. Accordingly, the first, second, and third color filters 181, 183,and 185 may improve the reflection of external light.

Referring to FIG. 5 , as described above, the pixel electrodes (AE1,AE2, and AE3) may have a multilayer structure. The first, second, andthird pixel electrodes AE1, AE2, and AE3 may be the same except thatthey may be located or disposed in different pixels. Thus, the first,second, and third pixel electrodes AE1, AE2, and AE3 will hereinafter bedescribed, taking the first pixel electrode AE1 as an example.

The first pixel electrode AE1 may include a first conductive patternAE11, which may be located or disposed on the insulating film 120, asecond conductive pattern AE12, which may be located or disposed on thefirst conductive pattern AE11, and a third conductive pattern AE13,which may be located or disposed on the first wavelength conversionpattern 130.

The first and second conductive patterns AE11 and AE12 may be located ordisposed between the first wavelength conversion pattern 130 and theinsulating film 120, and the third conductive pattern AE13 may belocated or disposed between the first wavelength conversion pattern 130and the organic layer OL.

The first conductive pattern AE1 may be connected to a first switchingelement T1 via a via hole of the insulating film 120, and the secondconductive pattern AE12 may be located or disposed between the firstconductive pattern AE11 and the first wavelength conversion pattern 130.

The third conductive pattern AE13 may include a high work functionmaterial that may facilitate the injection of holes, and the firstconductive pattern AE11 may include a material that may easily bedeposited on the insulating film 120.

The first and third conductive patterns AE11 and AE13 may include aconductive oxide, and the second conductive pattern AE12 may include areflective metal. The materials of the first, second, and thirdconductive patterns AE11, AE12, and AE13 may be as already describedabove, and thus, detailed descriptions thereof will be omitted.

The first and second conductive patterns AE11 and AE12 may have the samesize in a plan view. The first and second conductive patterns AE11 andAE12 may be located or disposed to overlap each other in the thicknessdirection. The sides of the first conductive pattern AE11 and the sidesof the second conductive pattern AE12 may be aligned in the thicknessdirection.

The third conductive pattern AE13 may be located or disposed on the topsurface and the sides of the first wavelength conversion pattern 130.The third conductive pattern AE13 may cover the sides of the firstwavelength conversion pattern 130. Parts of the third conductive patternAE located or disposed on the sides of the first wavelength conversionpattern 130 may be in direct contact with the top surface of the secondconductive pattern AE12, but the disclosure is not limited thereto.Alternatively, the parts of the third conductive pattern AE located ordisposed on the sides of the first wavelength conversion pattern 130 maynot be in direct contact with the top surface of the second conductivepattern AE12.

As described above, the organic layer OL may emit blue light L1 in theupward and downward directions with respect to the thickness direction.The blue light L1 emitted in the downward direction may be provided tothe first wavelength conversion pattern 130 by penetrating at least partof the third conductive pattern AE13.

The blue light L1 provided to the first wavelength conversion pattern130 may be converted into red light L2 by the first wavelength shifter135 and may then be emitted in the upward direction.

The red light L2 produced by the first wavelength shifter 135 may bereflected by the second wavelength conversion pattern AE12 and may thenbe emitted in the upward direction.

Also, the blue light L1 provided to the first wavelength conversionpattern 130 may be reflected by the second conductive pattern AE12,instead of meeting the first wavelength shifter 135, and may then beprovided back to the first wavelength conversion pattern 130 so that itcan meet the first wavelength shifter 135 and be converted into redlight L2 and can be emitted in the upward direction.

Since the wavelength conversion/light transmission patterns (130, 140,and 150) may be located or disposed on a TFT substrate including theswitching elements (T1, T2, and T3) and the organic light-emittingelements (ED1, ED2, and ED3), a substrate for arranging the wavelengthconversion/light transmission patterns (130, 140, and 150) may not beprovided, and processes of bonding the TFT substrate and othersubstrates may not be performed. Accordingly, manufacturing time andcost can be reduced.

Since a substrate for arranging the wavelength conversion/lighttransmission patterns (130, 140, and 150) is not needed, the overallthickness of the display device or the display panel 100 can be reduced,and as a result, the thinness and flexibility of the display panel 100can be improved.

The first and second wavelength conversion patterns 130 and 140 may belocated or disposed adjacent to or on the first, second, and thirdorganic light-emitting elements ED1 and ED2. The first and secondwavelength conversion patterns 130 and 140 may be adjacent to theorganic layer OL, so that the probability that light emitted from theorganic layer OL penetrates neighboring pixels may decrease. As aresult, color reproducibility can be improved. Since the distancebetween the organic layer OL and the first and second wavelengthconversion patterns 130 and 140 can be considerably reduced, the generalefficiency of the display panel 100 including the first, second, andthird organic light-emitting elements ED1, ED2, and ED3 can be improved.

A method of manufacturing a display device according to an embodiment ofthe disclosure will hereinafter be described. Like reference numeralsindicate like elements throughout the disclosure, and thus, detaileddescriptions thereof will be omitted or simplified.

FIG. 6 is a flowchart illustrating a method of manufacturing a displaydevice according to an embodiment of the disclosure, and FIGS. 7 through10 are schematic cross-sectional views illustrating the method of FIG. 6.

Referring to FIGS. 6 and 7 , a base substrate 110 with a firstconductive pattern AE11 formed thereon may be prepared (S10). The firstconductive pattern AE11 may be formed on an insulating film 120. Thefirst conductive pattern AE11 or a first conductive film may include aconductive oxide. It is to be understood that the first conductivepattern may include a first conductive film disposed between thewavelength conversion pattern and the first base substrate, and a secondconductive film disposed between the first conductive film and thewavelength conversion pattern.

The material of the first conductive pattern AE11 is as alreadydescribed above with reference to FIGS. 3 and 5 , and thus, a detaileddescription thereof will be omitted.

The first conductive pattern AE11 may be formed by a method of forming athin film such as sputtering. However, the disclosure is not limitedthereto and the conductive patterns may be formed by other methods offorming a thin film within the spirit and scope of the disclosure.

Thereafter, referring to FIGS. 6 and 8 , a second conductive patternAE12 or a second conductive film may be formed on the first conductivepattern AE11.

The second conductive pattern AE12 may be formed to overlap the firstconductive pattern AE11 in a thickness direction. The second conductivepattern AE12 may include a reflective conductive material or areflective metal. The functions and the material of the secondconductive pattern AE12 are as already described above with reference toFIGS. 3 and 5 , and thus, detailed descriptions thereof will be omitted.

The second conductive pattern AE12 may be formed directly on the topsurface of the first conductive pattern AE11.

The second conductive pattern AE12 may be formed by a method of forminga thin film such as sputtering, for example.

Thereafter, referring to FIGS. 6 and 9 , a first wavelength conversionpattern 130 may be formed on the second conductive pattern AE12 (S20).The first wavelength conversion pattern 130 may be formed byphotolithography, for example.

The first wavelength conversion pattern 130 may include a first baseresin 131 and a first wavelength shifter 135 and a first scatterer 133,which may be dispersed in the first base resin 131. The first wavelengthconversion pattern 130 may be formed by applying the first base resin131, the first wavelength shifter 135, and the first scatterer 133 onthe second conductive pattern AE12 and the insulating film 120 andsubjecting the first base resin 131, the first wavelength shifter 135,and the first scatterer 133 to ultraviolet (UV) curing and developmentof photolithography.

In an embodiment, the first wavelength conversion pattern 130 may beformed by inkjet printing.

In an example where barrier walls may be arranged around a region inwhich to apply the first wavelength conversion pattern 130, the firstwavelength conversion pattern 130 may be formed by applying the firstbase resin 131, the first wavelength shifter 135, and the firstscatterer 133 on the inner sides of the barrier walls and subjecting thefirst base resin 131, the first wavelength shifter 135, and the firstscatterer 133 to curing.

The functions and the material of the first wavelength conversionpattern 130 are as already described above with reference to FIGS. 3 and5 , and thus, detailed descriptions thereof will be omitted.

Thereafter, referring to FIGS. 6 and 10 , a third conductive patternAE13 may be formed on the first wavelength conversion pattern 130 (S30).

The third conductive pattern AE13 may be formed to overlap the secondconductive pattern AE12 and the first wavelength conversion pattern 130in the thickness direction.

The step of forming the third conductive pattern AE13 may includeforming the third conductive pattern AE13 to cover the sides of thefirst wavelength conversion pattern 130 and to be in contact with thesecond conductive pattern AE12.

The third conductive pattern AE13 may include a conductive oxide. Thethird conductive pattern AE13 may include the same or similar materialas the first conductive pattern AE11, but the disclosure is not limitedthereto. The functions and the material of the third conductive patternAE13 are as already described above with reference to FIGS. 3 and 5 ,and thus, detailed descriptions thereof will be omitted.

In an embodiment, the method of FIG. 6 may include, between the steps offorming the first wavelength conversion pattern 130 on the secondconductive pattern AE12 and forming the third conductive pattern AE13 onthe first wavelength conversion pattern 130, forming an inorganiccapping layer that may cover the sides of the first wavelengthconversion pattern 130 and may be in direct contact with the firstwavelength conversion pattern 130. In the step of forming the inorganiccapping layer, the third conductive pattern AE13 may be formed on theinorganic capping layer.

The step of forming the third conductive pattern AE13 may includeforming the third conductive pattern AE13 to extend on the sides of theinorganic capping layer.

Thereafter, referring to FIG. 6 , an organic layer OL may be formed onthe third conductive pattern AE13 (S40).

The organic layer OL may be formed directly on the top surface of thethird conductive pattern AE13.

The organic layer OL is as already described above, and thus, a detaileddescription thereof will be omitted.

Thereafter, referring to FIG. 6 , a common electrode CE may be formed onthe organic layer OL (S50).

The common electrode CE is as already described above, and thus, adetailed description thereof will be omitted.

The first, second, and third conductive patterns AE1, AE2, and AE3 maycorrespond to a first pixel electrode PE1, which may be located ordisposed in a first pixel PX1, and the first pixel electrode PE1, theorganic layer OL, and the common electrode CE may form a first organiclight-emitting element ED1.

According to the embodiment of FIG. 6 , since wavelengthconversion/light transmission patterns (130, 140, and 150) may belocated or disposed on a TFT substrate including switching elements (T1,T2, and T3) and organic light-emitting elements (ED1, ED2, and ED3), asubstrate for arranging the wavelength conversion/light transmissionpatterns (130, 140, and 150) may not be provided, and processes ofbonding the TFT substrate and other substrates may not be performed.Accordingly, manufacturing time and cost may be reduced.

By way of example, according to an embodiment of FIG. 6 , since asubstrate for arranging the wavelength conversion/light transmissionpatterns (130, 140, and 150) is not needed, the overall thickness of adisplay device or a display panel 100 may be reduced, and as a result,the thinness and flexibility of the display panel 100 may be improved.

According to an embodiment of FIG. 6 , the first and second wavelengthconversion patterns 130 and 140 may be located or disposed adjacent tothe first, second, and third organic light-emitting elements ED1, ED2,and ED3, and for example, to the organic layer OL, the probability thatlight emitted from the organic layer OL will penetrate neighboringpixels may decrease, and as a result, color reproducibility may beimproved. Since the distance between the organic layer OL and the firstand second wavelength conversion patterns 130 and 140 may beconsiderably reduced, the general efficiency of the display panel 100including the first, second, and third organic light-emitting elementsED1, ED2, and ED3 may be improved.

FIG. 11 is a partial schematic cross-sectional view of a display panelof a display device according to an embodiment.

Referring to FIG. 11 , a display panel 101 may differ from the displaypanel 100 of FIG. in that a second inorganic capping layer CPL2 may belocated or disposed between a third conductive pattern AE13 andwavelength conversion/light transmission patterns (130, 140, and 150).

As an example, the display panel 101 may include the second inorganiccapping layer CPL2, which may be located or disposed between the thirdconductive pattern AE13 and a first wavelength conversion pattern 130.

The second inorganic capping layer CPL2 may include an inorganicmaterial.

The second inorganic capping layer CPL2 may be located or disposed onthe top surface and the sides of the first wavelength conversion pattern130. The second inorganic capping layer CPL2 may be located or disposeddirectly on the top surface and the sides of the first wavelengthconversion pattern 130 to cover, or completely cover, the top surfaceand the sides of the first wavelength conversion pattern 130.

The third conductive pattern AE13 may be located or disposed on the topsurface and the sides of second inorganic capping layer CPL2. The thirdconductive pattern AE13 may be located or disposed directly on the topsurface and the sides of the second inorganic capping layer CPL2 tocover, or completely cover, the top surface and the sides of the secondinorganic capping layer CPL2.

Since the second inorganic capping layer CPL2 may be located or disposedon the top surface and the sides of the first wavelength conversionpattern 130, the first wavelength conversion pattern 130 may be properlysealed.

FIG. 12 is a partial schematic cross-sectional view of a display panelof a display device according to an embodiment.

Referring to FIG. 12 , a display panel 102 may differ from the displaypanel 101 of FIG. 11 in that a third conductive pattern AE13_1 may notbe located or disposed on the sides of a second inorganic capping layerCPL2.

For example, the third conductive pattern AE13_1 may be located ordisposed on the top surface of the second inorganic capping layer CPL2,but not on the sides of the second inorganic capping layer CPL2.

-   -   for example, the sides of the third conductive pattern AE13_1        may be located or disposed on the inside of the sides of a first        conductive pattern AE11 or a second conductive pattern AE12,        which may be located or disposed below the third conductive        pattern AE13_1.

The sides of the third conductive pattern AE13_1 may be aligned with thesides of the second inorganic capping layer CPL2, but the disclosure isnot limited thereto.

FIG. 13 is a partial schematic cross-sectional view of a display panelof a display device according to an embodiment of the disclosure.

Referring to FIG. 13 , a display panel 103 may differ from the displaypanel 100 in that barrier walls P may be located or disposed betweenwavelength conversion/light transmission patterns (130, 140, and 150).

For example, the barrier walls P may be located or disposed between thewavelength conversion/light transmission patterns (130, 140, and 150).

The barrier walls P may include at least one of the above-describedmaterials of the light-shielding member BM of the display panel 100, butthe disclosure is not limited thereto

The barrier walls P may prevent the materials of the wavelengthconversion/light transmission patterns (130, 140, and 150) from spillingover to neighboring pixels during the formation of the wavelengthconversion/light transmission patterns (130, 140, and 150) by inkjetprinting.

The height of the surfaces of the barrier walls P may be greater thanthe height of the surfaces of the wavelength conversion/lighttransmission patterns (130, 140, and 150), but the disclosure is notlimited thereto. For example, the height of the surfaces of the barrierwalls P may be substantially the same as the height of the surfaces ofthe wavelength conversion/light transmission patterns (130, 140, and150).

Conductive patterns MP may be located or disposed on the barrier wallsP. The conductive patterns MP may reflect light incident upon thebarrier walls P from the wavelength conversion/light transmissionpatterns (130, 140, and 150) while being or not being converted by thewavelength conversion/light transmission patterns (130, 140, and 150),and may thus provide the light back to the wavelength conversion/lighttransmission patterns (130, 140, and 150).

The conductive patterns MP may be located or disposed on the sides andthe top surface of each of the barrier walls P and may cover the sidesand the top surface of each of the barrier walls P.

FIG. 14 is a partial schematic cross-sectional view of a display panelof a display device according to an embodiment.

Referring to FIG. 14 , a display panel 104 may differ from the displaypanel 103 of FIG. 13 in that conductive patterns MP_1 may be located ordisposed on inner sides of barrier walls P that face wavelengthconversion/light transmission patterns (130, 140, and 150), but not onouter sides of the barrier walls P.

Other features of the display panel 104 are similar to as describedabove with reference to FIG. 13 , and thus, detailed descriptionsthereof will be omitted.

FIG. 15 is a schematic cross-sectional view of a display panel of adisplay device according to an embodiment.

Referring to FIG. 15 , a display panel 105 may differ from the displaypanel 100 in that a film 190 may be located or disposed on color filters(181, 183, and 185) and on a light-shielding member BM.

The film 190 may include an organic insulating material, but thedisclosure is not limited thereto.

Since the film 190 may be located or disposed on the color filters (181,183, and 185) and on the light-shielding member BM, the film 190 mayprotect elements located or disposed therebelow from external shock.

FIG. 16 is a partial schematic cross-sectional view of a display panelof a display device according to an embodiment.

Referring to FIG. 16 , a display panel 106 may differ from the displaypanel 100 in that color filters (181, 183, and 185) and alight-shielding member BM may be formed not on a TFT substrate, but onanother substrate.

The display panel 106 may include an upper substrate SUB which may facethe TFT substrate. The upper substrate SUB may include at least one ofthe above-described materials of the base substrate 110 of the displaypanel 100. For example, the upper substrate may include a rigid materialor a flexible material.

The light-shielding member BM may be located or disposed innon-light-emitting areas PB of the upper substrate SUB, and the colorfilters (181, 183, and 185) may be located or disposed on the uppersubstrate SUB, in light-emitting areas (PA1, PA2, and PA3) of pixels(PX1, PX2, and PX3).

A filler member 400 may be located or disposed between the color filters(181, 183, and 185) and a thin-film encapsulation layer 170. The displaypanel 106 may include a sealing member which surrounds the filler member400 in a plan view.

The filler member 400 may be located or disposed in a space surroundedby the color filters (181, 183, and 185), the thin-film encapsulationlayer 170, and the sealing member. The filler member 400 may be formedof a material capable of transmitting light therethrough and may have abuffer function. The filler member 400 may be formed of an organicmaterial. For example, the filler member 400 may be formed of a Si-basedorganic material, an epoxy-based organic material, or an acrylic organicmaterial, but the disclosure is not limited thereto.

Other features of the display panel 106 may be similar as describedabove with reference to FIG. 3 , and thus, detailed descriptions thereofwill be omitted.

FIG. 17 is a partial schematic cross-sectional view of a display panelof a display device according to an embodiment.

Referring to FIG. 17 , a display panel 107 may differ from the displaypanel 106 of FIG. 16 in that the filler member 400 of FIG. 16 may not beprovided, and that a planarization film PSL may be located or disposedbetween a thin-film encapsulation layer 170 and color filters (181, 183,and 185).

The planarization film PSL may include an organic insulating material.

Other features of the display panel 107 may be similar as describedabove with reference to FIG. 16 , and thus, detailed descriptionsthereof will be omitted.

FIG. 18 is a partial schematic cross-sectional view of a display panelof a display device according to an embodiment of the disclosure.

Referring to FIG. 18 , a display panel 108 differs from the displaypanel 100 in that wavelength conversion/light transmission patterns(130_1, 140_1, and 150_1) are located or disposed between a commonelectrode CE and a thin-film encapsulation layer 170_1.

For example, the wavelength conversion/light transmission patterns(130_1, 140_1, and 150_1) may be located or disposed between the commonelectrode CE and the thin-film encapsulation layer 170_1.

The thin-film encapsulation layer 170_1 may include a thirdencapsulation inorganic film 174, which may be located or disposedbetween a first inorganic capping layer CPL1 and the wavelengthconversion/light transmission patterns (130_1, 140_1, and 150_1).

The third encapsulation inorganic film 174 may include the same materialas a first encapsulation inorganic film 171, but the disclosure is notlimited thereto.

The wavelength conversion/light transmission patterns (130_1, 140_1, and150_1) may be located or disposed directly on the third encapsulationinorganic film 174.

The first encapsulation inorganic film 171 may be located or disposeddirectly on the first encapsulation inorganic film 171. The firstencapsulation inorganic film 171 may cover and protect the wavelengthconversion/light transmission patterns (130_1, 140_1, and 150_1), andthe third encapsulation inorganic film 174 may protect the wavelengthconversion/light transmission patterns (130_1, 140_1, and 150_1), frombelow the wavelength conversion/light transmission patterns (130_1,140_1, and 150_1).

Other features of the display panel 108 are almost the same as describedabove with reference to FIG. 3 , and thus, detailed descriptions thereofwill be omitted.

FIG. 19 is a partial schematic cross-sectional view of a display panelof a display device according to an embodiment of the disclosure.

Referring to FIG. 19 , a display panel 109 differs from the displaypanel 108 of FIG. 18 in that the third encapsulation inorganic film 174of FIG. 18 may not be provided.

For example, wavelength conversion/light transmission patterns (130_1,140_1, and 150_1) may be located or disposed directly on a firstinorganic capping layer CPL1.

Other features of the display panel 108 may be similar as describedabove with reference to FIG. 3 , and thus, detailed descriptions thereofwill be omitted.

FIG. 20 is a layout view of a display panel of a display deviceaccording to an embodiment of the disclosure, and FIG. 21 is a schematiccross-sectional view of an organic layer of the display panel of FIG. 20.

Referring to FIGS. 20 and 21 , a display panel 110 differs from thedisplay panel 100 in that it includes a fourth pixel PX4, which emitswhite light.

For example, the display panel 110 may include the fourth pixel PX4,which emits white light.

The fourth pixel PX4, like a first pixel PX1, may include anon-light-outputting area PB, which does not output light, a fourthlight-outputting area PA4, which may be surrounded by thenon-light-outputting area PB and emits white light.

Since the display panel 110 includes the fourth pixel PX4, which emitswhite light, the efficiency and the lifetime of the display panel 110can be improved.

Referring to FIG. 21 , a fourth organic light-emitting element may belocated or disposed in the fourth pixel PX4. An organic layer OLb_1 ofthe fourth organic light-emitting element may include a first emissionlayer EL1_1, a second emission layer EL2_1, and a third emission layerEL3_1. The order and the structure in which the first, second, and thirdemission layers EL1_1, EL2_1, and EL3_1 are stacked may be substantiallythe same as the order and the structure in which the first, second, andthird emission layers EL1, EL2, and EL3 of the organic layer OLb of FIG.4C are stacked, but the organic layer OLb_1 differs from the organiclayer OLb of FIG. 4C in that the combination of light emitted from thefirst, second, and third emission layers EL1_1, EL2_1, and EL3_1 may bewhite.

For example, one of the first, second, and third emission layers EL1_1,EL2_1, and EL3_1 emits blue light, another one of the first, second, andthird emission layers EL1_1, EL2_1, and EL3_1 emits green light, and theother emission layer emits red light.

Other features of the display panel 110 are the same as described abovewith reference to FIGS. 2 and 4C, and thus, detailed descriptionsthereof will be omitted.

FIG. 22 is a plan view of a pixel of a display device according to anembodiment, and FIG. 23 is a schematic cross-sectional view taken alonglines Xa-Xa′, Xb-Xb′, and Xc-Xc′ of FIG. 22 .

FIG. 23 illustrates a schematic cross-sectional view of a first pixelPX1 of FIG. 22 , but the schematic cross-sectional structure of thefirst pixel PX1 may be directly applicable to other first pixels andother non-first pixels. FIG. 23 illustrates a schematic cross-sectionalview taken along a line that extends from one end to the other end of alight-emitting element 300 of the first pixel PX1 of FIG. 22 .

Referring to FIGS. 22 and 23 , pixels PX may include light-emittingareas EMA.

A display panel of the display device of FIG. 22 may be a bottomemission-type display panel. For example, the bottom emission-typedisplay panel may reflect at least some of light emitted upwardly fromlight-emitting elements 300, which may be located or disposed in thepixels PX, in a downward direction, may provide the reflected light andlight emitted downwardly from the light-emitting elements 300 towavelength conversion/light transmission patterns (130_2, 140_2, and150_2), and may emit both light produced through wavelength conversionby first and second wavelength conversion patterns 130_2 and 140_2 andlight transmitted through a light transmission pattern 150_2 in thedownward direction to display a screen to a user.

The first, second, and third pixels PX1, PX2, and PX3 may include first,second, and third light-emitting areas EMA1, EMA2, and EMA3,respectively. The light-emitting areas EMA may be defined as areas inwhich the light-emitting elements 300 may be located or disposed to emitlight of a particular wavelength range. The light-emitting elements 300may include active layers, and the active layers may emit light of aparticular wavelength range with no directionality. For example, lightmay be emitted from the active layers not only in the directions of bothends of each of the light-emitting elements 300, but also in thedirections of the sides of each of the light-emitting elements 300. Thelight-emitting areas EMA may include the areas where the light-emittingelements 300 may be located or disposed and may include neighboringareas adjacent to the areas where the light-emitting elements 300 may belocated or disposed, and the neighboring areas may emit light emitted bythe light-emitting elements 300. However, the disclosure is not limitedthereto. Alternatively, the light-emitting areas EMA may even includeareas that emit light emitted from the light-emitting elements 300 andthen reflected or refracted by other elements. The light-emittingelements 300 may be located or disposed in the pixels PX and may formthe light-emitting areas EMA, which may include the areas in which thelight-emitting elements 300 may be located or disposed and theneighboring areas adjacent to the areas in which the light-emittingelements 300 may be located or disposed.

Although not illustrated, the pixels PX may include non-light-emittingareas, which may be defined as areas other than the light-emitting areasEMA. The non-light-emitting areas may be defined as areas in which thelight-emitting elements 300 may not be located or disposed and which donot emit light because of not being reached by light emitted from thelight-emitting elements 300. The non-light-emitting areas of the pixelsPX may include transistor regions TRA in which switching or drivingelements may be located or disposed.

Each of the pixels PX, for example, the first pixel PX1, may includeelectrodes (AE1 a and CE1), light-emitting elements 300, banks (BANK1,BANK2, and BANK3), and one or more insulating layers (NCL1, NCL2, PASL,and NCL3).

The electrodes (AE1 a and CE1) may be electrically connected to thelight-emitting elements 300 and may receive a predetermined voltage toallow the light-emitting elements 300 to emit light of a particularwavelength range. At least some of the electrodes (AE1 a and CE1) may beused to generate an electric field in each of the pixels PX to align thelight-emitting elements 300.

The electrodes (AE1 a and CE1) may include first and second electrodesAE1 a and CE1. The first electrode AE1 a may be a pixel electrodeseparate for each pixel PX, and the second electrode CE1 may be a commonelectrode formed in common for all the pixels PX. One of the first andsecond electrodes AE1 a and CE1 may correspond to the anode electrodesof the light-emitting elements 300, and the other electrode maycorrespond to the cathode electrodes of the light-emitting elements 300.However, the disclosure is not limited thereto. Alternatively, one ofthe first and second electrodes AE1 a and CE1 may correspond to thecathode electrodes of the light-emitting element 300, and the otherelectrode may correspond to the anode electrodes of the light-emittingelements 300.

The electrodes (AE1 a and CE1) may include electrode stem parts (AE11and CE11), which may extend in a first direction DR1, and electrodebranch parts (AE12 and CE12), which may extend in a second direction DR2that may intersect the first direction DR1 and branch off from theelectrode stem parts (AE11 and CE11).

The first electrode AE1 a may include a first electrode stem part AE11,which may extend in the first direction DR1, and one or more firstelectrode branch parts AE12, which may branch off from the firstelectrode stem part AE11 and extend in the second direction DR2.

The first electrode stem part AE11 may be spaced apart from the sides ofthe first pixel PX1 and may be located substantially in line with firstelectrode stem parts AE11 of the second and third pixels PX2 and PX3that may belong to the same row as (or are adjacent, in the firstdirection DR1, to) the first pixel PX. The first electrode stem partsAE11 of the first, second, and third pixels PX1, PX2, and PX3 may bespaced apart from one another and may thus apply different electricalsignals, from one another, to their respective groups of first electrodebranch parts AE12, and as a result, the groups of first electrode branchparts AE12 of the first, second, and third pixels PX1, PX2, and PX3 maybe driven separately.

The first electrode branch parts AE12 may branch off from at least partof the first electrode stem part AE11 and may extend in the seconddirection DR2 to be spaced apart from a second electrode stem part CE11,which may face the first electrode stem part AE11.

The second electrode CE1 may include the second electrode stem partCE11, which may extend in the first direction DR1 to be spaced apartfrom, and face, the first electrode stem part AE11, and at least onesecond electrode branch part CE12, which may branch off from the secondelectrode stem part CE11 and may extend in the second direction DR2. Apart of the second electrode stem part CE11 in the first pixel PX1 maybe connected to parts of the second electrode stem parts CE11 in thesecond and third pixels PX2 and PX3 that may be adjacent to the firstpixel PX1 in the first direction DR1. For example, the second electrodestem part CE11, unlike the first electrode stem part AE11, may extend,in the first direction DR1, not only across the first pixel PX1, butalso across the second and third pixels PX2 and PX3. The secondelectrode stem part CE11 may be connected to a part of the commonelectrode CE1 that may be located or disposed on the outside of adisplay area DA or in a non-display area NDA to extend in one direction.

The second electrode branch part CE12 may be spaced apart from, andface, the first electrode branch parts AE12 and may be spaced apart fromthe first electrode stem part AE11. The second electrode branch partCE12 may be connected to the second electrode stem part CE11, and theend of the second electrode branch part CE12 may be located or disposedinside the first pixel PX1 to be spaced apart from the first electrodestem part AE11.

FIGS. 22 and 23 illustrate that two first electrode branch parts AE12may be provided in the first pixel PX1, and that one second electrodebranch part CE12 may be provided between the two first electrode branchparts AE12, but the numbers of first electrode branch parts AE12 andsecond electrode branch parts CE12 are not particularly limited. As anexample, the first and second electrodes AE1 a and CE1 may notnecessarily extend in one direction, but may be formed in various othershapes. For example, the first and second electrodes AE1 a and CE1 maybe partially curved or bent, and one of the first and second electrodesAE1 a and CE1 may be arranged to surround the other electrode. Thestructures and the shapes of the first and second electrodes AE1 a andCE1 are not particularly limited as long as they can be at leastpartially spaced apart from, and face, each other to form the spacestherebetween in which to arrange the light-emitting elements 300.

The first and second electrodes AE1 a and CE1 may be electricallyconnected to the switching elements or the driving elements in a firsttransistor area TRA1 of the first pixel PX1 via contact holes, e.g.,first and second electrode contact holes CNTD and CNTS. The firstelectrode contact hole CNTD is illustrated as being formed in each ofthe first electrode stem parts AE11 of the first, second, and thirdpixels PX1, PX2, and PX3, and the second electrode contact hole CNTS isillustrated as being formed in the second electrode stem part CE11 thatextends across the first, second, and third pixels PX1, PX2, and PX3.However, the disclosure is not limited thereto. Alternatively, thesecond electrode contact hole CNTS may also be formed in each of thefirst, second, and third pixels PX1, PX2, and PX3.

The banks (BANK1, BANK2, and BANK3) may include outer banks BANK3, whichmay be located or disposed between the pixels PX, and inner banks (BANK1and BANK2), which may be located or disposed adjacent to the center ofeach of the pixels PX, below the electrodes (AE1 a and CE1). Althoughnot illustrated in FIG. 22 , first and second inner banks BANK1 andBANK2 may be located or disposed below the first electrode branch partsAE12 and the second electrode branch part CE12, respectively, asillustrated in FIG. 23 .

The outer banks BANK3 may be located or disposed between the pixels PX.The first electrode stem parts AE11 of the pixels PX may be spaced apartfrom one another by the outer banks BANK3. The outer banks BANK3 mayextend in the second direction DR2 and may be located or disposedbetween pixels PX arranged along the first direction DR1. However, thedisclosure is not limited thereto. Alternatively, the outer banks BANK3may extend in the first direction DR1 and may be located or disposedbetween pixels PX arranged along the second direction DR2. The outerbanks BANK3 may include the same material as the inner banks (BANK1 andBANK2), and the outer banks BANK3 and the inner banks (BANK1 and BANK2)may be formed at the same time by a single process.

The light-emitting elements 300 may be located or disposed between thefirst and second electrodes AE1 a and CE1. The light-emitting elements300 may be located or disposed between the first electrode branch partsAE12 and the second electrode branch part CE12. First ends of at leastsome of the light-emitting elements 300 may be electrically connected tothe first electrode AE1 a, and second ends of the at least some of thelight-emitting elements 300 may be electrically connected to the secondelectrode CE1. Both the first ends and the second ends of thelight-emitting elements 300 may be located or disposed on the firstelectrode branch parts AE12 and the second electrode branch part CE12,but the disclosure is not limited thereto. Alternatively, the first endsand the second ends of the light-emitting elements 300 may be located ordisposed between the first and second electrodes AE1 a and CE1 not tooverlap the first and second electrodes AE1 a and CE1.

The light-emitting elements 300 may be spaced apart from one another andmay be arranged between the electrodes (AE1 a and CE1) to besubstantially in parallel to one another. The distance between thelight-emitting elements 300 is not particularly limited. Some of thelight-emitting elements 300 may be densely grouped together, and some ofthe light-emitting elements 300 may be less densely grouped together.For example, the light-emitting elements 300 may be aligned and arrangedin one direction with non-uniform densities. The light-emitting elements300 may extend in one direction, and the direction in which thelight-emitting elements 300 extend may substantially form a right anglewith the direction in which the first and second electrodes AE1 a andCE1, for example, the first electrode branch parts AE12 and the secondelectrode branch part CE12, extend, but the disclosure is not limitedthereto. Alternatively, the light-emitting elements 300 may be arrangedat an inclination with respect to the direction in which the firstelectrode branch parts AE12 and the second electrode branch part CE12may extend.

The light-emitting elements 300 may include active layers havingdifferent materials and may thus emit light of different wavelengths.The display device of FIG. 22 may include light-emitting elements 300that may emit light of different wavelength ranges. The display deviceof FIG. 22 may include first light-emitting elements 301, which may belocated or disposed in the first pixel PX1, second light-emittingelements 302, which may be located or disposed in the second pixel PX2,and third light-emitting elements 303, which may be located or disposedin the third pixel PX3.

The first light-emitting elements 301 and the second light-emittingelements 302 may have the same or similar structure as light-emittingelements 300 of FIG. 3 . The first light-emitting elements 301 mayinclude active layers that may emit first light L1 having a firstcentral wavelength range, for example, red light, and the secondlight-emitting elements 302 may include active layers that emit secondlight L2 having a second central wavelength range, for example, greenlight. Accordingly, red light may be emitted from the first pixel PX1,and green light may be emitted from the second pixel PX2. The thirdlight-emitting elements 303 may include active layers that may emitthird light L3 having a third central wavelength range, for example,blue light. Accordingly, blue light may be emitted from the thirdlight-emitting elements 303. In an embodiment, the display device ofFIG. 22 may include groups of light-emitting elements 300, i.e., thefirst light-emitting elements 301, the second light-emitting elements302, and the third light-emitting elements 303, and the active layers ofthe first light-emitting elements 301, the active layers of the secondlight-emitting elements 302, and the active layers of the thirdlight-emitting elements 303 may emit light of different colors.

The display device of FIG. 22 may include a first insulating layer NCL1which may at least partially cover the first and second electrodes AE1 aand CE1.

The first insulating layer NCL1 may be located or disposed in each ofthe first, second, and third pixels PX1, PX2, and PX3. The firstinsulating layer NCL1 may be located or disposed to cover substantiallythe entire surfaces of the first, second, and third pixels PX1, PX2, andPX3 and may extend across the first, second, and third pixels PX1, PX2,and PX3. The first insulating layer NCL1 may be located or disposed toat least partially cover the first and second electrodes AE1 a and CE1.Although not illustrated in FIG. 22 , the first insulating layer NCL1may be located or disposed to expose parts of the first and secondelectrodes AE1 a and CE1, for example, parts of the first electrodebranch parts AE12 and of the second electrode branch part CE12.

The display device of FIG. 22 may include a circuit element layer, whichmay be located or disposed between the electrodes (AE1 a and CE1), asecond insulating layer NCL2, which may be located or disposed to atleast partially cover the electrodes (AE1 a and CE1) and thelight-emitting elements 300, and a passivation layer PASL.

The display panel of the display device of FIG. 22 may includewavelength conversion/light transmission patterns (130_2, 140_2, and150_2), which may be located or disposed below the light-emittingelements 300. The wavelength conversion/light transmission patterns(130_2, 140_2, and 150_2) may be located or disposed in the pixels PX.For example, a first wavelength conversion pattern 130_2 may be locatedor disposed in the first pixel PX1, a second wavelength conversionpattern 140_2 may be located or disposed in the second pixel PX2, and alight transmission pattern 150_2 may be located or disposed in the thirdpixel PX3.

The wavelength conversion/light transmission patterns (130_2, 140_2, and150_2) may be located or disposed in light-emitting areas EMA of thepixels PX, but not in non-light-emitting areas of the pixels PX. Forexample, the wavelength conversion/light transmission patterns (130_2,140_2, and 150_2) may not be located or disposed in the transistor areasTRA of the non-light-emitting areas of the pixels PX.

The wavelength conversion/light transmission patterns (130_2, 140_2, and150_2) may be the same as or similar to their respective counterparts ofFIG. 3 , and thus, further detailed descriptions thereof will beomitted.

As illustrated in FIG. 23 , the display device of FIG. 22 may include abase substrate 110, a buffer layer buf, a light-shielding layer BML, anda transistor and may include the electrodes (AE1 a and CE1), thelight-emitting elements 300, and the insulating layers (NCL1, NCL2,PASL, and NCL3), which may be located or disposed above the transistor.

The light-shielding layer BML may be located or disposed on the basesubstrate 110. The light-shielding layer BML may be electricallyconnected to a drain electrode DE or a first doping region DR of thetransistor.

The light-shielding layer BML may be located or disposed to overlap anactive material layer ACT of the transistor. The light-shielding layerBML may include a material that blocks the transmission of light and maythus prevent light from being upon the active material layer ACT. Forexample, the light-shielding layer BML may be formed of an opaquemetallic material that may block the transmission of light, but thedisclosure is not limited thereto. The light-shielding layer BML may notbe provided.

The buffer layer buf may be located or disposed on the light-shieldinglayer BML and the base substrate 110. The buffer layer buf may includethe light-shielding layer BML and may be located or disposed to coverthe entire surface of the base substrate 110. The buffer layer buf mayprevent the diffusion of impurity ions and the penetration of moistureand external air and may perform a surface planarization function.

A semiconductor layer may be located or disposed on the buffer layerbuf. The semiconductor layer may include the active material layer ACTand an auxiliary layer SACT. The semiconductor layer may includepolycrystalline silicon, monocrystalline silicon, or an oxidesemiconductor.

The active material layer ACT may include the first doping region DR, asecond doping region SR, and a channel region AR. The channel region ARmay be located or disposed between the first and second doping regionsDR and SR. The active material layer ACT may include polycrystallinesilicon, which may be formed by crystallizing amorphous silicon. Forexample, polycrystalline silicon may be formed by rapid thermalannealing (RTA), solid phase crystallization (SPC), excimer laserannealing (ELA), metal induced crystallization (MILC), or sequentiallateral solidification (SLS), but the disclosure is not limited thereto.

A first gate insulating film GL may be located or disposed on thesemiconductor layer. The first gate insulating film GL may include thesemiconductor layer and may be located or disposed to cover the entiresurface of the buffer layer buf. The first gate insulating film GL mayserve as the gate insulating film of the transistor.

A first conductive layer may be located or disposed on the first gateinsulating film GL. The first conductive layer may include, on the firstgate insulating film GL, a gate electrode GE, which may be located ordisposed on the active material layer ACT of the transistor, and a powersupply wire ELVSSL, which may be located or disposed on the auxiliarylayer SACT. The gate electrode GE may overlap the channel region AR ofthe active material layer ACT.

An interlayer insulating film ILD may be located or disposed on thefirst conductive layer. The interlayer insulating film ILD may includean organic insulating material and may perform not only the functions ofan interlayer insulating film, but also a surface planarizationfunction.

A second conductive layer may be located or disposed on the interlayerinsulating film ILD. The second conductive layer may include the drainelectrode DE and a source electrode SE of the transistor and a powersupply electrode ELVSSE, which may be located or disposed on the powersupply wire ELVSSL.

The drain electrode DE and the source electrode SE may be in contactwith the first and second doping regions SR and DR, respectively, of theactive material layer ACT via contact holes that penetrate theinterlayer insulating film ILD and the first gate insulating film GL.The drain electrode DE may be electrically connected to thelight-shielding layer BML via another contact hole.

A via layer VIA may be located or disposed on the second conductivelayer. The via layer VIA may include an organic insulating material andmay perform a surface planarization function.

The banks (BANK1, BANK2, and BANK3), the electrodes (AE1 a and CE1), andthe light-emitting elements 300 may be located or disposed on the vialayer VIA.

The banks (BANK1, BANK2, and BANK3) may include the inner banks (BANK1and BANK2), which may be located or disposed in the pixels PX to bespaced apart from one another, and the outer banks BANK3, which may belocated or disposed between the pixels PX.

During the fabrication of the display device of FIG. 22 , the outerbanks BANK3 may prevent ink sprayed by an inkjet printing device intoeach of the pixels PX to form the light-emitting elements 300 fromspilling over to neighboring pixels PX, but the disclosure is notlimited thereto.

The inner banks (BANK1 and BANK2) may include the first and second innerbanks BANK1 and BANK2, which may be located or disposed adjacent to thecenter of the first pixel PX1.

The first and second inner banks BANK1 and BANK2 may be located ordisposed to be spaced apart from, and face, each other. The firstelectrode AE1 a may be located or disposed on the first inner bankBANK1, and the second electrode CE1 may be located or disposed on thesecond inner bank BANK2. It may be understood that the first electrodebranch parts AE12 may be located or disposed on the first inner bankBANK1, and that the second electrode branch part CE12 may be located ordisposed on the second inner bank BANK2.

The first and second inner banks BANK1 and BANK2 may be located ordisposed in the first pixel PX1 to extend in the second direction DR2.Although not illustrated, the first and second inner banks BANK1 andBANK2 may extend in the second direction DR2 toward pixels PX that maybe adjacent to the first pixel PX1 in the second direction DR2, but thedisclosure is not limited thereto. The inner banks (BANK1 and BANK2) maybe located or disposed in each of the pixels PX to form patterns at thefront of the display device of FIG. 22 . The banks (BANK1, BANK2, andBANK3) may include polyimide (PI), but the disclosure is not limitedthereto.

The first and second inner banks BANK1 and BANK2 may at least partiallyprotrude with respect to the via layer VIA. The first and second innerbanks BANK1 and BANK2 may protrude upwardly with respect to a planewhere the light-emitting elements 300 may be located or disposed, andparts of the first and second inner banks BANK1 and BANK2 that protrudemay be at least partially inclined. The shape in which the first andsecond inner banks BANK1 and BANK2 protrude is not particularly limited.

The electrodes (AE1 a and CE1) may be located or disposed on the vialayer VIA and the inner banks (BANK1 and BANK2). As described above, theelectrodes (AE1 a and CE1) may include the electrode stem parts (AE11and CE11) and the electrode branch parts (AE12 and CE12). Xa-Xa′ of FIG.22 is a line that extends across the first electrode stem part AE11,Xb-Xb′ of FIG. 22 is a line that extends across one of the firstelectrode branch parts AE12 and the second electrode branch part CE12,and Xc-Xc′ of FIG. 22 is a line that extends across the second electrodestem part CE11. For example, it may be understood that part of the firstelectrode AE1 a illustrated in the “Xa-Xa′” section of FIG. 23 is thefirst electrode stem part AE12, and that parts of the first and secondelectrodes AE1 a and CE1 illustrated in the “Xb-Xb′” section of FIG. 23are one of the first electrode branch parts AE12 and the secondelectrode branch part CE12, respectively, and that part of the secondelectrode CE1 illustrated in “Xc-Xc′” section of FIG. 23 is the secondelectrode stem part CE11. The electrode stem parts (AE11 and CE11) andthe electrode branch parts (AE12 and CE12) may form the first and secondelectrodes AE1 a and CE1.

The first and second electrodes AE1 a and CE1 may be located or disposedin part on the via layer VIA and in part on the first and second innerbanks BANK1 and BANK2. As described above, the first electrode stem partAE11 of the first electrode AE1 a and the second electrode stem partCE11 of the second electrode CE1 may extend in the first direction DR1,and the first and second inner banks BANK1 and BANK may extend, in thesecond direction DR2, across the pixels PX. Although not illustrated,the first and second electrode stem parts AE11 and CE11 of the first andsecond electrodes AE1 a and CE1, which may extend in the first directionDR1, may partially overlap the first and second inner banks BANK1 andBANK2, but the disclosure is not limited thereto. Alternatively, thefirst and second electrode stem parts AE11 and CE11 may not overlap thefirst and second inner banks BANK1 and BANK2.

A first electrode contact hole CNDT may be formed in the first electrodestem part AE11 of the first electrode AE1 a to penetrate the via layerVIA and thus to expose part of the drain electrode DE of the transistor.The first electrode AE1 a may be in contact with the drain electrode DEvia the first electrode contact hole CNTD. The first electrode AE1 a maybe electrically connected to the drain electrode DE and may thus receiveelectrical signals.

The second electrode stem part CE11 of the second electrode CE1 mayextend in one direction and may be located or disposed even in thenon-light-emitting areas where the light-emitting elements 300 may notbe located or disposed. A second electrode contact hole CNTS may beformed in the second electrode stem part CE11 to penetrate the via layerVIA and thus to expose part of the power supply electrode ELVSSE. Thesecond electrode CE1 may be in contact with the power supply electrodeELVSSE via the second electrode contact hole CNTS. The second electrodeCE1 may be electrically connected to the power supply electrode ELVSSEand may thus receive electrical signals from the power supply electrodeELVSSE.

Parts of the first and second electrodes AE1 a and CE1, for example, thefirst electrode branch parts AE12 and the second electrode branch partCE12, may be located or disposed on the first and second inner banksBANK1 and BANK2. The first electrode branch parts AE12 of the firstelectrode AE1 a may be located or disposed to cover the first inner bankBANK1, and the second electrode branch part CE12 of the second electrodeCE1 may be located or disposed to cover the second inner bank BANK2.Since the first and second inner banks BANK1 and BANK2 may be spacedapart from each other at the center of the first pixel PX1, the firstelectrode branch parts AE12 and the second electrode branch part CE12may also be spaced apart from each other. The light-emitting elements300 may be located or disposed in areas between the first and secondelectrodes AE1 a and CE1, i.e., in areas where the first electrodebranch parts AE12 face the second electrode branch part CE12.

The electrodes (AE1 a and CE1) may include a transparent conductivematerial. For example, the electrodes (AE1 a and CE1) may include amaterial such as ITO, IZO, or ITZO, but the disclosure is not limitedthereto. In an embodiment, the electrodes (AE1 a and CE1) may be formedof a highly reflective conductive material. For example, the electrodes(AE1 a and CE1) may include a highly reflective metal such as Ag, copper(Cu), or Al. In this example, light incident upon the electrodes (AE1 aand CE1) may be reflected to be emitted upwardly.

The electrodes (AE1 a and CE1) may be formed as stacks of layers of atransparent conductive material and a highly reflective metal or may beformed as single-layer films including the transparent conductivematerial and the highly reflective metal. Each of the electrodes (AE1 aand CE1) may have a stack of ITO/Ag/ITO/IZO or may include an alloycontaining Al, nickel (Ni), or lanthanum (La), but the disclosure is notlimited thereto.

The first insulating layer NCL1 may be located or disposed on the vialayer VIA and the first and second electrodes AE1 a and CE1. The firstinsulating layer NCL1 may be located or disposed to partially cover thefirst and second electrodes AE1 a and CE1. The first insulating layerNCL1 may be located or disposed to cover most of the top surfaces of thefirst and second electrodes AE1 a and CE1, but may partially expose thefirst and second electrodes AE1 a and CE1. The first insulating layerNCL1 may be located or disposed to expose parts of the top surfaces ofthe first and second electrodes AE1 a and CE1, for example, parts of thetop surfaces of the first electrode branch parts AE1 a, which may belocated or disposed on the first inner bank BANK1, and part of the topsurface of the second electrode branch part CE12, which may be locatedor disposed on the second inner bank BANK2. For example, the firstinsulating layer NCL1 may be formed on the entire surface of the vialayer VIA and may include openings that partially expose the first andsecond electrodes AE1 a and CE1. The openings of the first insulatinglayer NCL1 may be located or disposed to expose relatively flat parts ofthe top surfaces of the first and second electrodes AE1 a and CE1.

The first insulating layer NCL1 may be formed to be recessed at the topthereof between the first and second electrodes AE1 a and CE1. In anembodiment, the first insulating layer NCL1 may include an inorganicinsulating material, and part of the top surface of the first insulatinglayer NCL1 that may cover the first and second electrodes AE1 a and CE1may be recessed due to the difference in height between the elementslocated or disposed below the first insulating layer NCL1.Light-emitting elements 300 located or disposed on the first insulatinglayer NCL1, between the first and second electrodes AE1 a and CE1, mayform empty spaces on the recessed part of the top surface of the firstinsulating layer NCL1. The light-emitting elements 300 may be located ordisposed to be partially spaced apart from the top surface of the firstinsulating layer NCL1, and the material of the second insulating layerNCL2 may fill the empty spaces between the first insulating layer NCL1and the light-emitting elements 300.

Alternatively, the first insulating layer NCL1 may form a flat topsurface on which to arrange the light-emitting elements 300. The flattop surface of the first insulating layer NCL1 may extend in onedirection toward the first and second electrodes AE1 a and CE1 and maybe terminated on the inclined sides of the first and second electrodesAE1 a and CE1. For example, the first insulating layer NCL1 may belocated or disposed in the overlapping areas of the first and secondelectrodes AE1 a and CE1 and inclined sides of the first and secondinner banks BANK1 and BANK2. Contact electrodes (OE1 and OE2) may be incontact with exposed parts of the first and second electrodes AE1 a andCE1 and may also be in contact with the ends of the light-emittingelements 300 over the flat top surface of the first insulating layerNCL1.

The first insulating layer NCL1 may protect the first and secondelectrodes AE1 a and CE1 and may insulate the first and secondelectrodes AE1 a and CE1 from each other. For example, the firstinsulating layer NCL1 may prevent the light-emitting elements 300, whichmay be located or disposed on the first insulating layer NCL1, frombeing in contact with, and damaged by, other elements. The shape and thestructure of the first insulating layer NCL1 are not particularlylimited.

The light-emitting elements 300 may be located or disposed on the firstinsulating layer NCL1, between the electrodes (AE1 a and CE1). Forexample, at least one light-emitting element 300 may be located ordisposed on part of the first insulating layer NCL1 between theelectrode branch parts (AE12 and CE12), but the disclosure is notlimited thereto. Alternatively, at least some of the light-emittingelements 300 may be located or disposed in areas other than areasbetween the electrode branch parts (AE12 and CE12). As an example, thelight-emitting elements 300 may be located or disposed in theoverlapping area of the electrodes (AE1 a and CE1). The light-emittingelements 300 may be located or disposed on sides of the electrode branchparts (AE12 and CE12) that face one another, and may be electricallyconnected to the electrodes (AE1 a and CE1) via the contact electrodes(OE1 and OE2).

As described above, active layers that emit light L of the samewavelength may be located or disposed in each of the pixels PX, andlight-emitting elements 300 that emit light of different wavelengths,i.e., first, second, and third light L1, L2, and L3, may be provided ineach of the pixels PX. FIG. 23 illustrates only the first pixel PX1 inwhich a first light-emitting element 301 may be located or disposed, butthe structure of the first pixel PX1 including the first light-emittingelement 301 may also be directly applicable to the second and thirdpixels PX2 and PX3.

In each of the light-emitting elements 300, multiple layers may belocated or disposed in a direction parallel to the via layer VIA. Eachof the light-emitting elements 300 may include a first semiconductorlayer 310, a second semiconductor layer 320, and an active layer 360,which may be sequentially arranged in the direction parallel to the vialayer VIA, but the disclosure is not limited thereto. The order in whichthe multiple layers of each of the light-emitting elements may bearranged is not particularly limited, and alternatively, the multiplelayers of each of the light-emitting elements 300 may be arranged in adirection perpendicular to the via layer VIA.

Each of the light-emitting elements 300 may include first and secondelectrode layers 371 and 372. The first electrode layer 371 may be incontact with a second contact electrode and the second electrode layer372 may be in contact with a first contact electrode OE1. The firstcontact electrode OE1 may be in contact with the second electrode layer372 and with a first surface of an insulating film 380 and a thirdsurface of the insulating film 380 that may be adjacent to the secondelectrode layer 372, and the second contact electrode OE2 may be incontact with the first electrode layer 371 and with the first surfaceand a second surface of the insulating film 380 that may be adjacent tothe first electrode layer 371. However, the disclosure is not limitedthereto. Alternatively, the display device of FIG. 22 may includelight-emitting elements 300 each having first and second electrodelayers 371 and 372 in contact with the first and second contactelectrodes OE1 and OE2, respectively. The light-emitting elements 300may extend in one direction, and a length of the first semiconductorlayer 310 may be greater than a length of the second semiconductor layer320. The first electrode layer 371 may be further apart than the secondelectrode layer 372 from the active layer 360.

The second insulating layer NCL2 may be located or disposed on parts ofthe light-emitting elements 300. The second insulating layer NCL2 may belocated or disposed to surround parts of the outer surfaces of thelight-emitting elements 300. The second insulating layer NCL2 mayprotect the light-emitting elements 300 and may fix the light-emittingelements 300 during the fabrication of the display device of FIG. 22 .The second insulating layer NCL2 may be located or disposed in partbetween the bottom surfaces of the light-emitting elements and the firstinsulating layer NCL1. As described above, the second insulating layerNCL2 may be formed to fill the spaces between the first insulating layerNCL1 and the light-emitting elements 300. Accordingly, the secondinsulating layer NCL2 may be formed to surround the outer surfaces ofthe light-emitting elements 300, but the disclosure is not limitedthereto.

In a plan view, the second insulating layer NCL2 may be located ordisposed to extend in the second direction DR2 between the firstelectrode branch parts AE12 and the second electrode branch part CE12.For example, in a plan view, the second insulating layer NCL2 may havean island or linear shape on the via layer VIA.

The contact electrodes (OE1 and OE2) may be located or disposed on theelectrodes (AE1 a and CE1) and the second insulating layer NCL2. Thefirst and second contact electrodes OE1 and OE2 may be located ordisposed on the second insulating layer NCL2 to be spaced apart fromeach other. The second insulating layer NCL2 may insulate the first andsecond contact electrodes OE1 and OE2 from each other so that the firstand second electrodes OE1 and OE2 may be prevented from being in directcontact with each other.

Although not illustrated, the contact electrodes (OE1 and OE2) mayextend in the second direction DR2 and may be spaced apart from eachother in the first direction DR1. The contact electrodes (OE1 and OE2)may be in contact with at least first ends of the light-emittingelements 300 and may be electrically connected to the first or secondelectrode AE1 a or CE1 to receive electric signals. The contactelectrodes (OE1 and OE2) may include the first and second contactelectrodes OE1 and OE2. The first contact electrode OE1 may be locatedor disposed on the first electrode branch parts AE12 and may be incontact with the first ends of the light-emitting elements 300, and thesecond contact electrode OE2 may be located or disposed on the secondelectrode branch part CE12 and may be in contact with second ends of thelight-emitting elements 300.

The first contact electrode OE1 may be in contact with some exposedparts of the first electrode AE1 on the first inner bank BANK1, and thesecond contact electrode OE2 may be in contact with some exposed partsof the second electrode CE1 on the second inner bank BANK2. The contactelectrodes (OE1 and OE2) may transmit electric signals received from theelectrodes (AE1 a and CE1) to the light-emitting elements 300.

The contact electrodes (OE1 and OE2) may include a conductive material.For example, the contact electrodes (OE1 and OE2) may include ITO, IZO,ITZO, or Al, but the disclosure is not limited thereto.

The passivation layer PASL may be located or disposed on the firstcontact electrode OE1, the second contact electrode OE2, and the secondinsulating layer NCL2. The passivation layer PASL may protect theelements located or disposed on the via layer VIA from an externalenvironment.

The second insulating layer NCL2 and the passivation layer PASL mayinclude an inorganic insulating material or an organic insulatingmaterial. For example, the second insulating layer NCL2 and thepassivation layer PASL may include an inorganic insulating material suchas silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride(SiOxNy), aluminum oxide (Al₂O₃), or aluminum nitride (AlN), but thedisclosure is not limited thereto. In an example, the second insulatinglayer NCL2 and the passivation layer PASL may include an organicinsulating material such as an acrylic resin, an epoxy resin, a phenolicresin, a polyamide resin, a polyimide resin, an unsaturated polyesterresin, a polyphenylene resin, a polyphenylene sulfide resin, BCB, acardo resin, a siloxane resin, a silsesquioxane resin, polymethylmethacrylate, polycarbonate, or a polymethyl methacrylate-polycarbonatesynthetic resin, but the disclosure is not limited thereto.

The display device of FIG. 22 may include insulating layers other thanthose illustrated in FIG. 23 . The display device may include a thirdinsulating layer NCL3, which may be located or disposed to protect thefirst contact electrode OE1.

The third insulating layer NLC3 may be located or disposed on the firstand second contact electrodes OE1 and OE2 in a light-emitting area EMAof the first pixel PX1. The third insulating layer NCL3 may include atleast one of the above-described materials of the first insulating layerNCL1. The third insulating layer NCL3 may be located or disposed on thefirst and second contact electrodes OE1 and OE2 in the light-emittingarea EMA of the first pixel PX1 and may thus insulate the first andsecond contact electrodes OE1 and OE2 from a conductive pattern RE. Thethird insulating layer NCL3 may prevent the first and second contactelectrodes OE1 and OE2 from being electrically connected by theconductive pattern RE, i.e., from being short-circuited.

The third insulating layer NCL3 may be located or disposed inlight-emitting areas EMA, but not in non-light-emitting areas.Alternatively, in an embodiment, the third insulating layer NCL3 may belocated or disposed in the non-light-emitting areas.

The display panel of the display device of FIG. 22 may includewavelength conversion/light transmission patterns (130_2, 140_2, and150_2). The wavelength conversion/light transmission patterns (130_2,140_2, and 150_2) may be located or disposed between an interlayerinsulating layer ILD and the via layer VIA.

The wavelength conversion/light transmission patterns (130_2, 140_2, and150_2) may be located or disposed in the light-emitting areas EMA, butnot in the non-light-emitting areas.

As described above, in the bottom emission-type display panel of thedisplay device of FIG. 22 , at least some of light emitted upwardly fromthe light-emitting elements 300 may be reflected by the conductivepattern RE or a reflective electrode to travel downwardly. Light emitteddownwardly from the light-emitting elements 300 and the light reflectedby the reflective electrode to travel downwardly may both enter thewavelength conversion/light transmission patterns (130_2, 140_2, and150_2).

As previously described with reference to FIG. 3 , first and secondwavelength conversion patterns 130_2 and 140_2 may wavelength-convertand/or scatter light provided thereto and may thus emit lightdownwardly, and a light transmission pattern 150_2 may scatter lightprovided thereto and may thus emit light downwardly.

Although not illustrated, color filters may be located or disposed belowthe wavelength conversion/light transmission patterns (130_2, 140_2, and150_2). The color filters may include a red color filter, which may belocated or disposed in the first pixel PX1, a green color filter, whichmay be located or disposed in the second pixel PX2, and a blue colorfilter, which may be located or disposed in the third pixel PX3. Thecolor filters are as already described above with reference to FIG. 3 ,and thus, a further detailed description thereof will be omitted.

While embodiments are described herein, it is not intended that theseembodiments describe all possible forms of the disclosure. Rather, thedescription in the specification is that of description rather thanlimitation, and it is understood that various changes may be madewithout departing from the spirit and scope of the disclosure.Additionally, the features of various implementing embodiments may becombined to form further embodiments of the disclosure.

What is claimed is:
 1. A method of manufacturing a display device,comprising: forming a first conductive pattern on a base substrate;forming a wavelength conversion pattern on the first conductive pattern;forming a second conductive pattern on the wavelength conversionpattern; forming an organic light-emitting layer on the secondconductive pattern; and forming a common electrode on the organiclight-emitting layer.
 2. The method of claim 1, wherein the forming thefirst conductive pattern comprises: forming a first conductive film onthe base substrate; and forming a second conductive film on the firstconductive film.
 3. The method of claim 2, wherein the first conductivefilm includes a conductive oxide, the second conductive film includes ametal, and the second conductive pattern includes a conductive oxide. 4.The method of claim 2, wherein the forming the second conductive patterncomprises forming the second conductive pattern over sides of thewavelength conversion pattern and in contact with the second conductivefilm.
 5. The method of claim 2, further comprising: between the formingthe wavelength conversion pattern and the forming the second conductivepattern, forming an inorganic capping layer over sides of the wavelengthconversion pattern and in contact with the wavelength conversionpattern, wherein the forming the second conductive pattern comprisesforming the second conductive pattern on the inorganic capping layer. 6.The method of claim 5, wherein the forming the second conductive patternfurther comprises forming the second conductive pattern on sides of theinorganic capping layer.